Parametric results for: irff131 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

69.0 mJ 2

9 hits Apply

DRAIN 4

9 hits Apply

Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 4

9 hits Apply

DS Breakdown Voltage-Min (1)

80 V 6

9 hits Apply

Drain Current-Max (ID) (1)

8 A 8

9 hits Apply

Drain-source On Resistance-Max (1)

180 mΩ 6

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

9 hits Apply

TO-205AF 6

9 hits Apply

O-MBCY-W3 6

9 hits Apply

e0 7

9 hits Apply

Manufacturer (6)

General Electric Solid State 1 Harris Semiconductor 2 International Rectifier 1 Intersil Corporation 2 Rochester Electronics LLC 1 Thomson Consumer Electronics 2

9 hits Apply

Number of Elements (1)

1 8

9 hits Apply

Number of Terminals (1)

3 6

9 hits Apply

ENHANCEMENT MODE 8

9 hits Apply

150.0 °C 7

9 hits Apply

METAL 6

9 hits Apply

ROUND 6

9 hits Apply

CYLINDRICAL 6

9 hits Apply

Active 1 Obsolete 6 Transferred 2

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

9 hits Apply

25 W 4

9 hits Apply

25 W 7

9 hits Apply

Surface Mount (1)

NO 8

9 hits Apply