Parametric results for: hn2e02f under Small Signal Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

150 mA 4

4 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DC Current Gain-Min (hFE) (3)

120.0 2 200.0 1 350.0 1

Min - Max

4 hits Apply

R-PDSO-G6 4

4 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

6 4

4 hits Apply

125.0 °C 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Obsolete 4

4 hits Apply

Polarity/Channel Type (1)

NPN 4

4 hits Apply

300 mW 3

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply

Transition Frequency-Nom (fT) (1)

60 MHz 4

4 hits Apply