Parametric results for: cedm8001vl tr under Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

LOGIC LEVEL COMPATIBLE 2

4 hits Apply

DRAIN 2

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 1

4 hits Apply

DS Breakdown Voltage-Min (1)

20 V 2

4 hits Apply

Drain Current-Max (ID) (1)

100 mA 2

4 hits Apply

Drain-source On Resistance-Max (1)

12 Ω 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

4 hits Apply

R-PBCC-N3 2

4 hits Apply

e0 1 e3 1

4 hits Apply

Manufacturer (1)

Central Semiconductor Corp 4

4 hits Apply

1 1

4 hits Apply

Number of Elements (1)

1 2

4 hits Apply

Number of Terminals (1)

3 2

4 hits Apply

ENHANCEMENT MODE 2

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

CHIP CARRIER 2

4 hits Apply

Active 4

4 hits Apply

260 1

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 2

4 hits Apply

Surface Mount (1)

YES 2

4 hits Apply