Parametric results for: apt50m50 under Power Field-Effect Transistors

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Manufacturer Part Number: apt50m50
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APT50M50L2LLG
Microchip Technology Inc
$38.0173 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 500 V 1 89 A 50 mΩ 3200 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 356 A SWITCHING SILICON TO-264AA R-PSIP-T3 e1 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE Tin/Silver/Copper (Sn/Ag/Cu) THROUGH-HOLE SINGLE MICROCHIP TECHNOLOGY INC TO-264MAX, 3 PIN compliant EAR99
APT50M50JLL
Microchip Technology Inc
$52.8777 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 4 500 V 1 71 A 50 mΩ 3200 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 595 W 284 A SWITCHING SILICON R-PUFM-X4 e1 Not Qualified UL RECOGNIZED 150 °C ISOLATED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT TIN SILVER COPPER UNSPECIFIED UPPER MICROCHIP TECHNOLOGY INC compliant EAR99
APT50M50JFLL
Microchip Technology Inc
$65.5953 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 4 500 V 1 71 A 50 mΩ 3200 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 595 W 284 A SWITCHING SILICON R-PUFM-X4 e1 Not Qualified UL RECOGNIZED 150 °C ISOLATED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT TIN SILVER COPPER UNSPECIFIED UPPER MICROCHIP TECHNOLOGY INC compliant EAR99
APT50M50JVR
Microchip Technology Inc
$68.6496 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 4 500 V 1 77 A 50 mΩ 3600 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 308 A SWITCHING SILICON R-PUFM-X4 Not Qualified UL RECOGNIZED 150 °C NOT SPECIFIED NOT SPECIFIED ISOLATED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT UNSPECIFIED UPPER MICROCHIP TECHNOLOGY INC compliant EAR99
APT50M50JVFR
Microchip Technology Inc
$71.5210 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 4 500 V 1 77 A 50 mΩ FRED FET 3600 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 308 A SWITCHING SILICON R-PUFM-X4 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED ISOLATED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT UNSPECIFIED UPPER MICROCHIP TECHNOLOGY INC compliant EAR99
APT50M50L2LL
Advanced Power Technology
Check for Price No Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 500 V 1 89 A 50 mΩ 3200 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 890 W 356 A SWITCHING SILICON TO-264AA R-PSIP-T3 e0 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE TIN LEAD THROUGH-HOLE SINGLE ADVANCED POWER TECHNOLOGY INC IN-LINE, R-PSIP-T3 unknown EAR99
APT50M50JLC
Advanced Power Technology
Check for Price Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 4 500 V 1 77 A 50 mΩ 3600 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 308 A SWITCHING SILICON R-PUFM-X4 Not Qualified UL RECOGNIZED NOT SPECIFIED NOT SPECIFIED ISOLATED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT UNSPECIFIED UPPER ADVANCED POWER TECHNOLOGY INC FLANGE MOUNT, R-PUFM-X4 unknown EAR99
APT50M50L2FLL
Advanced Power Technology
Check for Price No Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 500 V 1 89 A 50 mΩ 3200 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 356 A SWITCHING SILICON TO-264AA R-PSIP-T3 Not Qualified NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE ADVANCED POWER TECHNOLOGY INC TO-264MAX, 3 PIN unknown EAR99
APT50M50L2LLG
Microsemi Corporation
Check for Price Yes Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 500 V 1 89 A 50 mΩ 3200 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 356 A SWITCHING SILICON TO-264AA R-PSIP-T3 e1 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE TIN SILVER COPPER THROUGH-HOLE SINGLE MICROSEMI CORP TO-264MAX, 3 PIN compliant EAR99 TO-264AA 3
APT50M50JVR
Advanced Power Technology
Check for Price Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 4 500 V 1 77 A 50 mΩ 3600 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 700 W 308 A SWITCHING SILICON R-PUFM-X4 Not Qualified UL RECOGNIZED 150 °C NOT SPECIFIED NOT SPECIFIED ISOLATED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT UNSPECIFIED UPPER ADVANCED POWER TECHNOLOGY INC ISOTOP-4 unknown EAR99