Parametric results for: VP2206N3-G under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 12

12 hits Apply

DS Breakdown Voltage-Min (1)

60 V 12

12 hits Apply

Drain Current-Max (ID) (1)

640 mA 12

12 hits Apply

Drain-source On Resistance-Max (1)

900 mΩ 12

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

12 hits Apply

40 pF 12

12 hits Apply

TO-92 12

12 hits Apply

O-PBCY-T3 12

12 hits Apply

e3 2

12 hits Apply

Manufacturer (2)

Microchip Technology Inc 6 Supertex Inc 6

12 hits Apply

Number of Elements (1)

1 12

12 hits Apply

Number of Terminals (1)

3 12

12 hits Apply

ENHANCEMENT MODE 12

12 hits Apply

150.0 °C 7

12 hits Apply

-55.0 °C 7

12 hits Apply

PLASTIC/EPOXY 12

12 hits Apply

ROUND 12

12 hits Apply

CYLINDRICAL 12

12 hits Apply

Active 6 Transferred 6

12 hits Apply

Yes 1

12 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 12

12 hits Apply

740 mW 1

12 hits Apply

740 mW 1

12 hits Apply

Surface Mount (1)

NO 12

12 hits Apply