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S29AL016J70BFI010
Spansion
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$0.7188 | Yes | Yes | Transferred | 16.7772 Mbit | 16 | 16K,8K,32K,64K | 1MX16 | 3 V | 70 ns | FLASH | TOP BOOT BLOCK | 8 | TOP | YES | YES | YES | 1 | 1,2,1,31 | 1000000 | 1.0486 M | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 30 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 40 | 48 | PLASTIC/EPOXY | VFBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1 mm | 8.15 mm | 6.15 mm | SPANSION INC | BGA | 8.15 X 6.15 MM, 0.80 MM PITCH, LEAD FREE, FPBGA-48 | 48 | compliant | EAR99 | 8542.32.00.51 | ||||||||
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S29AL008J70BFI010
Cypress Semiconductor
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$1.6707 | Yes | Transferred | 8.3886 Mbit | 16 | 8K,4K,16K,32K | 512KX16 | 3 V | 70 ns | FLASH | TOP BOOT BLOCK | 8 | TOP | YES | YES | YES | 1 | 1,2,1,15 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 12 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 40 | 48 | PLASTIC/EPOXY | VFBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BALL | 800 µm | BOTTOM | 1 mm | 8.15 mm | 6.15 mm | CYPRESS SEMICONDUCTOR CORP | compliant | EAR99 | 8542.32.00.51 | ||||||||||||
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S29AL008J70BFI010
Infineon Technologies AG
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$1.9200 | Yes | Not Recommended | 8.3886 Mbit | 16 | 8K,4K,16K,32K | 512KX16 | 3 V | 70 ns | FLASH | TOP BOOT BLOCK | 8 | TOP | YES | YES | YES | 1 | 1,2,1,15 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 12 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 40 | 48 | PLASTIC/EPOXY | VFBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1 mm | 8.15 mm | 6.15 mm | INFINEON TECHNOLOGIES AG | compliant | Infineon | |||||||||||||
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SST39VF200A-70-4C-MAQE
Microchip Technology Inc
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$1.9600 | Yes | Active | 2.0972 Mbit | 16 | 2K | 128KX16 | 3 V | 70 ns | FLASH | YES | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 64 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 3 V | 20 µA | 30 µA | 3.6 V | 2.7 V | CMOS | COMMERCIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e1 | 3 | 70 °C | 260 | 40 | 48 | PLASTIC/EPOXY | VFBGA | BGA48,6X11,20 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 500 µm | BOTTOM | 730 µm | 6 mm | 4 mm | MICROCHIP TECHNOLOGY INC | DSBGA | 4 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, MO-207CB-4, WFBGA-48 | 48 | compliant | EAR99 | 8542.32.00.51 | ||||||||||
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S29AL016J70BFI010
Infineon Technologies AG
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$2.0016 | Yes | Not Recommended | 16.7772 Mbit | 16 | 16K,8K,32K,64K | 1MX16 | 3 V | 70 ns | FLASH | TOP BOOT BLOCK | 8 | TOP | YES | YES | YES | 1 | 1,2,1,31 | 1000000 | 1.0486 M | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 30 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 40 | 48 | PLASTIC/EPOXY | VFBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1 mm | 8.15 mm | 6.15 mm | INFINEON TECHNOLOGIES AG | compliant | Infineon | |||||||||||||
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SST39VF401C-70-4C-MAQE
Microchip Technology Inc
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$2.1150 | Yes | Active | 4.1943 Mbit | 16 | 8K,4K,16K,32K | 256KX16 | 3 V | 70 ns | FLASH | BOTTOM BOOT BLOCK | BOTTOM | YES | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 1,2,1,7 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 3 V | YES | 20 µA | 30 µA | 3.6 V | 2.7 V | CMOS | COMMERCIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e1 | 3 | 70 °C | 260 | 40 | 48 | PLASTIC/EPOXY | VFBGA | BGA48,6X11,20 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 500 µm | BOTTOM | 730 µm | 6 mm | 4 mm | MICROCHIP TECHNOLOGY INC | DSBGA | 4 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, MO-207CB-4, WFBGA-48 | 48 | compliant | EAR99 | 8542.32.00.51 | Microchip | ||||||
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SST39VF402C-70-4C-MAQE
Microchip Technology Inc
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$2.1150 | Yes | Active | 4.1943 Mbit | 16 | 8K,4K,16K,32K | 256KX16 | 3 V | 70 ns | FLASH | TOP BOOT BLOCK | TOP | YES | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 1,2,1,7 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 3 V | YES | 20 µA | 30 µA | 3.6 V | 2.7 V | CMOS | COMMERCIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e1 | 3 | 70 °C | 260 | 40 | 48 | PLASTIC/EPOXY | VFBGA | BGA48,6X11,20 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 500 µm | BOTTOM | 730 µm | 6 mm | 4 mm | MICROCHIP TECHNOLOGY INC | DSBGA | 4 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, MO-207CB-4, WFBGA-48 | 48 | compliant | 3A991.B.1.A | 8542.32.00.51 | Microchip | ||||||
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SST39LF402C-55-4C-MAQE
Microchip Technology Inc
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$2.1150 | Yes | Active | 4.1943 Mbit | 16 | 8K,4K,16K,32K | 256KX16 | 3.3 V | 55 ns | FLASH | TOP BOOT BLOCK | TOP | YES | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 1,2,1,7 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 3.3 V | YES | 20 µA | 30 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e1 | 3 | 70 °C | 260 | 40 | 48 | PLASTIC/EPOXY | VFBGA | BGA48,6X11,20 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 500 µm | BOTTOM | 730 µm | 6 mm | 4 mm | MICROCHIP TECHNOLOGY INC | DSBGA | 4 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, MO-207CB-4, WFBGA-48 | 48 | compliant | 3A991.B.1.A | 8542.32.00.51 | Microchip | ||||||
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SST39LF401C-55-4C-MAQE
Microchip Technology Inc
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$2.1150 | Yes | Active | 4.1943 Mbit | 16 | 8K,4K,16K,32K | 256KX16 | 3.3 V | 55 ns | FLASH | BOTTOM BOOT BLOCK | BOTTOM | YES | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 1,2,1,7 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 3.3 V | YES | 20 µA | 30 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e1 | 3 | 70 °C | 260 | 40 | 48 | PLASTIC/EPOXY | VFBGA | BGA48,6X11,20 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 500 µm | BOTTOM | 730 µm | 6 mm | 4 mm | MICROCHIP TECHNOLOGY INC | DSBGA | 4 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, MO-207CB-4, WFBGA-48 | 48 | compliant | 3A991.B.1.A | 8542.32.00.51 | |||||||
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S29AL008J70BAI020
Infineon Technologies AG
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$2.1318 | No | Not Recommended | 8.3886 Mbit | 16 | 8K,4K,16K,32K | 512KX16 | 3 V | 70 ns | FLASH | BOTTOM BOOT BLOCK | 8 | BOTTOM | YES | YES | YES | 1 | 1,2,1,15 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3 V | YES | NO | 5 µA | 12 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B48 | e0 | 3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 48 | PLASTIC/EPOXY | VFBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | 1 mm | 8.15 mm | 6.15 mm | INFINEON TECHNOLOGIES AG | 8.15 X 6.15 MM, 0.80 MM PITCH, FPBGA-48 | compliant | Infineon |