Parametric results for: TK72E12N1 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

256.0 mJ 2

3 hits Apply

DRAIN 2

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

120 V 2

3 hits Apply

Drain Current-Max (ID) (1)

72 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

4.4 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

30 pF 1

3 hits Apply

TO-220AB 2

3 hits Apply

R-PSFM-T3 2

3 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 3

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

3 2

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

FLANGE MOUNT 2

3 hits Apply

Active 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

255 W 2

3 hits Apply

Surface Mount (1)

NO 2

3 hits Apply