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SQ1719B
Msi Electronics Inc
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Check for Price | Obsolete | 5.6 pF | 0.02 pA | 400 mW | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 30 V | 1 | PREDICTABLE TRACKING, VERY HIGH Q | 5 % | 2.5 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 1000 | 25 V | ABRUPT | Not Qualified | O-LALF-W2 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MSI ELECTRONICS INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.80 | ||||
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SQ1716B
Spectrum Control
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Check for Price | Obsolete | 3 pF | 20 nA | 400 mW | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 30 V | 1 | PREDICTABLE TRACKING, VERY HIGH Q | 5 % | 2.4 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 1200 | 25 V | ABRUPT | Not Qualified | O-LALF-W2 | DO-7 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | API TECHNOLOGIES CORP | O-LALF-W2 | compliant | EAR99 | 8541.10.00.80 | |||
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SQ1717C
Spectrum Control
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Check for Price | Obsolete | 3.9 pF | 20 nA | 400 mW | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 30 V | 1 | PREDICTABLE TRACKING, VERY HIGH Q | 2 % | 2.4 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 1100 | 25 V | ABRUPT | Not Qualified | O-LALF-W2 | DO-7 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | API TECHNOLOGIES CORP | O-LALF-W2 | compliant | EAR99 | 8541.10.00.80 | |||
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SQ1716C
Msi Electronics Inc
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Check for Price | Obsolete | 3 pF | 0.02 pA | 400 mW | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 30 V | 1 | PREDICTABLE TRACKING, VERY HIGH Q | 2 % | 2.4 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 1200 | 25 V | ABRUPT | Not Qualified | O-LALF-W2 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MSI ELECTRONICS INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.80 | ||||
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SQ1715CCHIP
Spectrum Control
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Check for Price | Obsolete | 2.7 pF | 20 nA | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 30 V | 1 | PREDICTABLE TRACKING, VERY HIGH Q | 2 % | 2.3 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 1300 | 25 V | ABRUPT | Not Qualified | X-XUUC-N | 175 °C | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | NO LEAD | UPPER | API TECHNOLOGIES CORP | X-XUUC-N | compliant | EAR99 | 8541.10.00.40 | DIE | ||||||
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SQ1716C
Spectrum Control
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Check for Price | Obsolete | 3 pF | 20 nA | 400 mW | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 30 V | 1 | PREDICTABLE TRACKING, VERY HIGH Q | 2 % | 2.4 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 1200 | 25 V | ABRUPT | Not Qualified | O-LALF-W2 | DO-7 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | API TECHNOLOGIES CORP | O-LALF-W2 | compliant | EAR99 | 8541.10.00.80 | |||
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SQ1714BCHIP
Msi Electronics Inc
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Check for Price | Obsolete | 2.2 pF | 0.02 pA | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 30 V | 1 | PREDICTABLE TRACKING, VERY HIGH Q | 5 % | 2.2 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 1400 | 25 V | ABRUPT | Not Qualified | X-XUUC-N | 175 °C | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | NO LEAD | UPPER | MSI ELECTRONICS INC | X-XUUC-N | unknown | EAR99 | 8541.10.00.40 | |||||||
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SQ1718CCHIP
Msi Electronics Inc
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Check for Price | Obsolete | 4.7 pF | 0.02 pA | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 30 V | 1 | PREDICTABLE TRACKING, VERY HIGH Q | 2 % | 2.5 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 1000 | 25 V | ABRUPT | Not Qualified | X-XUUC-N | 175 °C | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | NO LEAD | UPPER | MSI ELECTRONICS INC | X-XUUC-N | unknown | EAR99 | 8541.10.00.40 | |||||||
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SQ1716BCHIP
Msi Electronics Inc
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Check for Price | Obsolete | 3 pF | 0.02 pA | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 30 V | 1 | PREDICTABLE TRACKING, VERY HIGH Q | 5 % | 2.4 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 1200 | 25 V | ABRUPT | Not Qualified | X-XUUC-N | 175 °C | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | NO LEAD | UPPER | MSI ELECTRONICS INC | X-XUUC-N | unknown | EAR99 | 8541.10.00.40 | |||||||
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SQ1718B
Msi Electronics Inc
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Check for Price | Obsolete | 4.7 pF | 0.02 pA | 400 mW | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 30 V | 1 | PREDICTABLE TRACKING, VERY HIGH Q | 5 % | 2.5 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 1000 | 25 V | ABRUPT | Not Qualified | O-LALF-W2 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MSI ELECTRONICS INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.80 |