Parametric results for: SDI-12 APPLICATION NOTES under SRAMs

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Memory IC Type: APPLICATION SPECIFIC SRAM
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IS61WV12816DBLL-10TLI-TR
Integrated Silicon Solution Inc
$0.6944 Yes Yes Active 2.0972 Mbit 16 128KX16 3 V 10 ns APPLICATION SPECIFIC SRAM COMMON 1 128000 131.072 k ASYNCHRONOUS 3-STATE PARALLEL 70 µA 2 V 65 µA 3.6 V 2.4 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified e3 1 85 °C -40 °C 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 800 µm DUAL 1.2 mm 18.415 mm 10.16 mm INTEGRATED SILICON SOLUTION INC TSOP2, TSOP44,.46,32 compliant 3A991.B.2.A 8542.32.00.41 Integrated Silicon Solution Inc.
IS61WV25616EDBLL-10BLI-TR
Integrated Silicon Solution Inc
$1.0060 Yes Yes Active 4.1943 Mbit 16 256KX16 3 V 10 ns APPLICATION SPECIFIC SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 6 mA 2 V 35 µA 3.6 V 2.4 V CMOS INDUSTRIAL R-PBGA-B48 Not Qualified e3 1 85 °C -40 °C 48 PLASTIC/EPOXY TFBGA BGA48,6X8,30 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Matte Tin (Sn) BALL 750 µm BOTTOM 1.2 mm 8 mm 6 mm INTEGRATED SILICON SOLUTION INC TFBGA, BGA48,6X8,30 compliant 3A991.B.2.A 8542.32.00.41 Integrated Silicon Solution Inc.
IS61WV25616EDBLL-8TLI-TR
Integrated Silicon Solution Inc
$2.1692 Yes Yes Active 4.1943 Mbit 16 256KX16 3 V 8 ns APPLICATION SPECIFIC SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 6 mA 2 V 45 µA 3.6 V 2.4 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified e3 1 85 °C -40 °C 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm INTEGRATED SILICON SOLUTION INC TSOP2, TSOP44,.46,32 compliant 3A991.B.2.A 8542.32.00.41 Integrated Silicon Solution Inc.
IS61WV25616EDBLL-10BLI
Integrated Silicon Solution Inc
$2.5861 Yes Yes Active 16.7772 Mbit 16 1MX16 3 V 10 ns APPLICATION SPECIFIC SRAM COMMON 1 1000000 1.0486 M ASYNCHRONOUS 3-STATE PARALLEL 6 mA 2 V 35 µA 3.6 V 2.4 V CMOS INDUSTRIAL R-PBGA-B48 Not Qualified e3 1 85 °C -40 °C 48 PLASTIC/EPOXY TFBGA BGA48,6X8,30 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Matte Tin (Sn) BALL 750 µm BOTTOM 1.2 mm 8 mm 6 mm INTEGRATED SILICON SOLUTION INC TFBGA, BGA48,6X8,30 compliant 3A991.B.2.A 8542.32.00.41 Integrated Silicon Solution Inc.
IS61WV25616EDBLL-8TLI
Integrated Silicon Solution Inc
$4.0570 Yes Yes Active 4.1943 Mbit 16 256KX16 3.3 V 8 ns APPLICATION SPECIFIC SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 6 mA 2 V 45 µA 3.63 V 2.97 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified e3 1 85 °C -40 °C 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm INTEGRATED SILICON SOLUTION INC TSOP2, TSOP44,.46,32 compliant 3A991.B.2.A 8542.32.00.41 Integrated Silicon Solution Inc.
IS61WV25616EDBLL-8BLI
Integrated Silicon Solution Inc
$5.1893 Yes Yes Active 4.1943 Mbit 16 256KX16 3.3 V 8 ns APPLICATION SPECIFIC SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 6 mA 2 V 45 µA 3.63 V 2.97 V CMOS INDUSTRIAL R-PBGA-B48 Not Qualified e3 1 85 °C -40 °C 48 PLASTIC/EPOXY TFBGA BGA48,6X8,30 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Matte Tin (Sn) BALL 750 µm BOTTOM 1.2 mm 8 mm 6 mm INTEGRATED SILICON SOLUTION INC TFBGA, BGA48,6X8,30 compliant 3A991.B.2.A 8542.32.00.41 Integrated Silicon Solution Inc.
70V3399S133BF
Integrated Device Technology Inc
$73.7305 No No Transferred 2.3593 Mbit 18 128KX18 3.3 V 4.2 ns 133 MHz APPLICATION SPECIFIC SRAM FLOW-THROUGH OR PIPELINED ARCHITECTURE COMMON 1 2 128000 131.072 k SYNCHRONOUS 3-STATE PARALLEL 30 mA 3.15 V 400 µA 3.45 V 3.15 V CMOS COMMERCIAL S-PBGA-B208 Not Qualified e0 3 70 °C 225 20 208 PLASTIC/EPOXY BGA BGA208,17X17,32 SQUARE GRID ARRAY YES TIN LEAD BALL 800 µm BOTTOM INTEGRATED DEVICE TECHNOLOGY INC FPBGA-208 not_compliant 3A991.B.2.A 8542.32.00.41 CABGA 208 BF208
71V2556S150BGGI
Integrated Device Technology Inc
Check for Price Yes Yes Transferred 4.7186 Mbit 36 128KX36 3.3 V 3.8 ns 150 MHz APPLICATION SPECIFIC SRAM COMMON 1 128000 131.072 k SYNCHRONOUS 3-STATE PARALLEL 45 mA 3.14 V 335 µA 3.465 V 3.135 V CMOS INDUSTRIAL X-PBGA-B119 Not Qualified e1 3 85 °C -40 °C 260 30 119 PLASTIC/EPOXY BGA BGA119,7X17,50 UNSPECIFIED GRID ARRAY YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 1.27 mm BOTTOM INTEGRATED DEVICE TECHNOLOGY INC BGA, BGA119,7X17,50 compliant 3A991.B.2.A 8542.32.00.41 1998-08-01
7009L20PFG8
Integrated Device Technology Inc
Check for Price Yes Yes Transferred 1.0486 Mbit 8 128KX8 5 V 20 ns APPLICATION SPECIFIC SRAM COMMON 1 2 128000 131.072 k ASYNCHRONOUS 3-STATE PARALLEL 3 mA 4.5 V 300 µA 5.5 V 4.5 V CMOS COMMERCIAL S-PQFP-G100 Not Qualified e3 3 70 °C 260 30 100 PLASTIC/EPOXY QFP QFP100,.63SQ,20 SQUARE FLATPACK YES MATTE TIN GULL WING 500 µm QUAD INTEGRATED DEVICE TECHNOLOGY INC TQFP-100 compliant 3A991.B.2.A 8542.32.00.41 TQFP 100 PNG100
6116SA25YI
Integrated Device Technology Inc
Check for Price No No Obsolete 16.384 kbit 8 2KX8 5 V 25 ns APPLICATION SPECIFIC SRAM COMMON 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 2 mA 4.5 V 120 µA 5.5 V 4.5 V CMOS INDUSTRIAL R-PDSO-J24 Not Qualified e0 3 85 °C -40 °C 225 30 24 PLASTIC/EPOXY SOJ SOJ24,.34 RECTANGULAR SMALL OUTLINE YES Tin/Lead (Sn85Pb15) J BEND 1.27 mm DUAL INTEGRATED DEVICE TECHNOLOGY INC not_compliant EAR99 8542.32.00.41