Parametric results for: SDF12N100GAFEGD1B under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

CUSTOM BENT LEAD OPTIONS ARE AVAILABLE 1

1 hit Apply

ISOLATED 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

1 kV 1

1 hit Apply

Drain Current-Max (ID) (1)

12 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

1 Ω 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

R-MSFM-T3 1

1 hit Apply

Manufacturer (1)

Solitron Devices Inc 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

3 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

150.0 °C 1

1 hit Apply

METAL 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Active 1

1 hit Apply

No 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

300 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply