Parametric results for: S29GL512S11DHI023 under Flash Memories

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Manufacturer Part Number: s29gl512s11dhi023
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S29GL512S11DHI023
Spansion
Check for Price Yes Transferred 536.8709 Mbit 8 64K 64MX8 3 V 110 ns FLASH YES YES YES 1 512 64000000 67.1089 M ASYNCHRONOUS 16 words PARALLEL 2.7 V YES 100 µA 80 µA 3.6 V 2.7 V CMOS INDUSTRIAL YES NOR TYPE S-PBGA-B64 Not Qualified 85 °C -40 °C 64 PLASTIC/EPOXY LBGA BGA64,8X8,40 SQUARE GRID ARRAY, LOW PROFILE YES BALL 1 mm BOTTOM 1.4 mm 9 mm 9 mm SPANSION INC BGA 9 X 9 MM, HALOGEN FREE AND LEAD FREE, FBGA-64 64 compliant 3A991.B.1.A 8542.32.00.51
S29GL512S11DHI023
Cypress Semiconductor
Check for Price Yes Transferred 536.8709 Mbit 8 64K 64MX8 3 V 110 ns FLASH BOTTOM/TOP YES YES YES 1 512 64000000 67.1089 M ASYNCHRONOUS 16 words PARALLEL 2.7 V YES 100 µA 80 µA 3.6 V 2.7 V CMOS INDUSTRIAL YES NOR TYPE S-PBGA-B64 Not Qualified e1 3 85 °C -40 °C 260 30 64 PLASTIC/EPOXY LBGA BGA64,8X8,40 SQUARE GRID ARRAY, LOW PROFILE YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 1 mm BOTTOM 1.4 mm 9 mm 9 mm CYPRESS SEMICONDUCTOR CORP 9 X 9 MM, HALOGEN FREE AND LEAD FREE, FBGA-64 compliant 3A991.B.1.A 8542.32.00.51
S29GL512S11DHI023
Infineon Technologies AG
Check for Price Yes Active 536.8709 Mbit 16 64K 32MX16 3 V 110 ns FLASH YES YES YES 20 100000 Write/Erase Cycles 1 512 32000000 33.5544 M ASYNCHRONOUS 3-STATE 16 words PARALLEL 3 V YES 100 µA 100 µA 3.6 V 2.7 V CMOS INDUSTRIAL YES NOR TYPE S-PBGA-B64 Not Qualified e1 3 85 °C -40 °C 260 30 64 PLASTIC/EPOXY LBGA BGA64,8X8,40 SQUARE GRID ARRAY, LOW PROFILE YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 1 mm BOTTOM 1.4 mm 9 mm 9 mm INFINEON TECHNOLOGIES AG 9 X 9 MM, HALOGEN FREE AND LEAD FREE, FBGA-64 compliant Infineon