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Memory Density: 16-32,8589934592-9663676416 Memory IC Type: RAMBUS DRAM MODULE
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MR18R162WDG0-CM8
 Samsung Semiconductor 		Check for Price Yes Obsolete 9.6637 Gbit 18 512MX18 2.5 V 40 ns 800 MHz BLOCK ORIENTED PROTOCOL RAMBUS DRAM MODULE SELF CONTAINED REFRESH COMMON 1 1 512000000 536.8709 M SYNCHRONOUS 3-STATE YES 4.34 mA 2.63 V 2.37 V CMOS R-XDMA-N184 Not Qualified NOT SPECIFIED NOT SPECIFIED 184 UNSPECIFIED DIMM DIMM184,40 RECTANGULAR MICROELECTRONIC ASSEMBLY NO NO LEAD 1 mm DUAL SAMSUNG SEMICONDUCTOR INC DMA DIMM, DIMM184,40 184 compliant EAR99 8542.32.00.36
MR18R162WAG0-CM8
 Samsung Semiconductor 		Check for Price Obsolete 9.6637 Gbit 18 512MX18 2.5 V BLOCK ORIENTED PROTOCOL RAMBUS DRAM MODULE SELF CONTAINED REFRESH 1 1 512000000 536.8709 M SYNCHRONOUS YES 2.63 V 2.37 V CMOS R-XDMA-N184 Not Qualified 184 UNSPECIFIED DIMM RECTANGULAR MICROELECTRONIC ASSEMBLY NO NO LEAD DUAL SAMSUNG SEMICONDUCTOR INC DMA DIMM, 184 unknown EAR99 8542.32.00.36
MD18R326GAG0-CN1
 Samsung Semiconductor 		Check for Price Yes Obsolete 9.6637 Gbit 36 256MX36 2.5 V 32 ns 600 MHz 32768 BLOCK ORIENTED PROTOCOL RAMBUS DRAM MODULE SELF CONTAINED REFRESH COMMON 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 1.976 A 4.27 mA 2.63 V 2.37 V CMOS COMMERCIAL R-XDMA-N232 Not Qualified 70 °C NOT SPECIFIED NOT SPECIFIED 232 UNSPECIFIED DIMM DIMM232,40 RECTANGULAR MICROELECTRONIC ASSEMBLY NO NO LEAD 1 mm DUAL SAMSUNG SEMICONDUCTOR INC DMA DIMM, DIMM232,40 232 compliant EAR99 8542.32.00.36
MR18R326GAG0-CM8
 Samsung Semiconductor 		Check for Price Yes Obsolete 9.6637 Gbit 18 512MX18 2.5 V 40 ns 800 MHz BLOCK ORIENTED PROTOCOL RAMBUS DRAM MODULE SELF CONTAINED REFRESH COMMON 1 1 512000000 536.8709 M SYNCHRONOUS 3-STATE YES 2.755 mA 2.63 V 2.37 V CMOS R-XDMA-N184 Not Qualified 3 260 184 UNSPECIFIED DIMM DIMM184,40 RECTANGULAR MICROELECTRONIC ASSEMBLY NO NO LEAD 1 mm DUAL SAMSUNG SEMICONDUCTOR INC DMA DIMM, DIMM184,40 184 unknown EAR99 8542.32.00.36
MR18R162WEG0-CM8
 Samsung Semiconductor 		Check for Price Yes Obsolete 9.6637 Gbit 18 512MX18 2.5 V 40 ns 800 MHz BLOCK ORIENTED PROTOCOL RAMBUS DRAM MODULE SELF CONTAINED REFRESH COMMON 1 1 512000000 536.8709 M SYNCHRONOUS 3-STATE YES 4.765 mA 2.63 V 2.37 V CMOS R-XDMA-N184 Not Qualified 3 184 UNSPECIFIED DIMM DIMM184,40 RECTANGULAR MICROELECTRONIC ASSEMBLY NO NO LEAD 1 mm DUAL SAMSUNG SEMICONDUCTOR INC DMA DIMM, DIMM184,40 184 compliant EAR99 8542.32.00.36
MD18R326GAG0-CM8
 Samsung Semiconductor 		Check for Price Yes Obsolete 9.6637 Gbit 36 256MX36 2.5 V 40 ns 400 MHz 32768 BLOCK ORIENTED PROTOCOL RAMBUS DRAM MODULE SELF CONTAINED REFRESH COMMON 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 1.496 A 3.35 mA 2.63 V 2.37 V CMOS COMMERCIAL R-XDMA-N232 Not Qualified 70 °C NOT SPECIFIED NOT SPECIFIED 232 UNSPECIFIED DIMM DIMM232,40 RECTANGULAR MICROELECTRONIC ASSEMBLY NO NO LEAD 1 mm DUAL SAMSUNG SEMICONDUCTOR INC DMA DIMM, DIMM232,40 232 compliant EAR99 8542.32.00.36
MR18R162WAG0-CK8
 Samsung Semiconductor 		Check for Price Obsolete 9.6637 Gbit 18 512MX18 2.5 V BLOCK ORIENTED PROTOCOL RAMBUS DRAM MODULE SELF CONTAINED REFRESH 1 1 512000000 536.8709 M SYNCHRONOUS YES 2.63 V 2.37 V CMOS R-XDMA-N184 Not Qualified 184 UNSPECIFIED DIMM RECTANGULAR MICROELECTRONIC ASSEMBLY NO NO LEAD DUAL SAMSUNG SEMICONDUCTOR INC DMA DIMM, 184 unknown EAR99 8542.32.00.36
MR18R162WDG0-CK8
 Samsung Semiconductor 		Check for Price Yes Obsolete 9.6637 Gbit 18 512MX18 2.5 V 45 ns 800 MHz BLOCK ORIENTED PROTOCOL RAMBUS DRAM MODULE SELF CONTAINED REFRESH COMMON 1 1 512000000 536.8709 M SYNCHRONOUS 3-STATE YES 4.34 mA 2.63 V 2.37 V CMOS R-XDMA-N184 Not Qualified NOT SPECIFIED NOT SPECIFIED 184 UNSPECIFIED DIMM DIMM184,40 RECTANGULAR MICROELECTRONIC ASSEMBLY NO NO LEAD 1 mm DUAL SAMSUNG SEMICONDUCTOR INC DMA DIMM, DIMM184,40 184 compliant EAR99 8542.32.00.36
MD18R326GAG0-CT9
 Samsung Semiconductor 		Check for Price Yes Obsolete 9.6637 Gbit 36 256MX36 2.5 V 32 ns 533 MHz 32768 BLOCK ORIENTED PROTOCOL RAMBUS DRAM MODULE SELF CONTAINED REFRESH COMMON 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 1.856 A 4.1 mA 2.63 V 2.37 V CMOS COMMERCIAL R-XDMA-N232 Not Qualified 70 °C NOT SPECIFIED NOT SPECIFIED 232 UNSPECIFIED DIMM DIMM232,40 RECTANGULAR MICROELECTRONIC ASSEMBLY NO NO LEAD 1 mm DUAL SAMSUNG SEMICONDUCTOR INC DMA DIMM, DIMM232,40 232 compliant EAR99 8542.32.00.36
MR18R326GAG0-CT9
 Samsung Semiconductor 		Check for Price Yes Obsolete 9.6637 Gbit 18 512MX18 2.5 V 32 ns 1.066 GHz BLOCK ORIENTED PROTOCOL RAMBUS DRAM MODULE SELF CONTAINED REFRESH COMMON 1 1 512000000 536.8709 M SYNCHRONOUS 3-STATE YES 3.33 mA 2.63 V 2.37 V CMOS R-XDMA-N184 Not Qualified 3 260 184 UNSPECIFIED DIMM DIMM184,40 RECTANGULAR MICROELECTRONIC ASSEMBLY NO NO LEAD 1 mm DUAL SAMSUNG SEMICONDUCTOR INC DMA DIMM, DIMM184,40 184 unknown EAR99 8542.32.00.36