Parametric results for: PHN603S under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

COMPLEX 3

4 hits Apply

DS Breakdown Voltage-Min (1)

25 V 3

4 hits Apply

Drain Current-Max (ID) (2)

5 A 1 5.5 A 3

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (1)

35 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

MS-013AD 3

4 hits Apply

R-PDSO-G24 3

4 hits Apply

Manufacturer (2)

NXP Semiconductors 3 Philips Semiconductors 1

4 hits Apply

Number of Elements (1)

6 3

4 hits Apply

Number of Terminals (1)

24 3

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 3

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

SMALL OUTLINE 3

4 hits Apply

Obsolete 3 Transferred 1

4 hits Apply

260 1 NOT SPECIFIED 3

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

1.5 W 1 1.67 W 1

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply