Parametric results for: NP32N055SDE under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

64.0 mJ 2

5 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 2

5 hits Apply

DS Breakdown Voltage-Min (1)

55 V 2

5 hits Apply

Drain Current-Max (ID) (1)

32 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

29 mΩ 2

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-252AA 2

5 hits Apply

R-PSSO-G2 2

5 hits Apply

e0 2

5 hits Apply

Manufacturer (2)

NEC Electronics America Inc 1 Renesas Electronics Corporation 4

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

2 2

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

175.0 °C 3

5 hits Apply

PLASTIC/EPOXY 2

5 hits Apply

RECTANGULAR 2

5 hits Apply

SMALL OUTLINE 2

5 hits Apply

Contact Manufacturer 1 Obsolete 4

5 hits Apply

Yes 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

66 W 3

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply