Parametric results for: NE900275 under RF Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

SOURCE 1

3 hits Apply

Configuration (1)

SINGLE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

20 V 2

3 hits Apply

Drain Current-Max (ID) (2)

60 mA 1 600 mA 1

Min (A) - Max (A)

3 hits Apply

METAL SEMICONDUCTOR 2

3 hits Apply

Highest Frequency Band (1)

KU BAND 3

3 hits Apply

R-CDFM-F2 3

3 hits Apply

Manufacturer (3)

California Eastern Laboratories (CEL) 1 NEC Electronics America Inc 1 Renesas Electronics Corporation 1

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

2 3

3 hits Apply

DEPLETION MODE 3

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Obsolete 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

3 W 1

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply