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AS4C8M32MD2A-25BPCN
Alliance Memory Inc
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$3.3275 | Yes | Active | 268.4355 Mbit | 32 | 8MX32 | 1.8 V | FOUR BANK PAGE BURST | LPDDR2 DRAM | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.2V NOM | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 1.95 V | 1.7 V | CMOS | OTHER | S-PBGA-B168 | 85 °C | -25 °C | NOT SPECIFIED | NOT SPECIFIED | 168 | PLASTIC/EPOXY | VFBGA | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 500 µm | BOTTOM | 900 µm | 12 mm | 12 mm | ALLIANCE MEMORY INC | POPFBGA-168 | unknown | EAR99 | 8542.32.00.24 | Alliance Memory | ||||||||||||||||
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EDB4432BBPA-1D-F-D
Micron Technology Inc
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$6.9818 | Yes | Obsolete | 4.295 Gbit | 32 | 128MX32 | 1.2 V | SINGLE BANK PAGE BURST | LPDDR2 DRAM | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | YES | 1.3 V | 1.14 V | CMOS | S-PBGA-B168 | e1 | 168 | PLASTIC/EPOXY | VFBGA | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 500 µm | BOTTOM | 800 µm | 12 mm | 12 mm | MICRON TECHNOLOGY INC | VFBGA, | compliant | EAR99 | 8542.32.00.36 | Micron | |||||||||||||||||||
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IS43LD16640D-18BLI
Integrated Silicon Solution Inc
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$7.1524 | Active | 1.0737 Gbit | 16 | 64MX16 | 1.2 V | 10 ns | 533 MHz | 8192 | MULTI BANK PAGE BURST | LPDDR2 DRAM | SELF REFRESH, IT ALSO REQUIRES 1.2V NOMINAL SUPPLY | COMMON | 4,8,16 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | YES | 4,8,16 | 1.5 mA | 220 µA | 1.3 V | 1.14 V | CMOS | R-PBGA-B134 | 85 °C | -40 °C | 134 | PLASTIC/EPOXY | VFBGA | BGA134,10X17,25 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 650 µm | BOTTOM | 1 mm | 11.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | FBGA-134 | compliant | EAR99 | 8542.32.00.32 | ||||||||||||
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EDB1332BDBH-1DAAT-F-R
Micron Technology Inc
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$7.8650 | Yes | Obsolete | 1.0737 Gbit | 32 | 32MX32 | 1.2 V | MULTI BANK PAGE BURST | LPDDR2 DRAM | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | YES | 1.3 V | 1.14 V | CMOS | R-PBGA-B134 | e1 | 134 | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 650 µm | BOTTOM | 1 mm | 11.5 mm | 10 mm | MICRON TECHNOLOGY INC | VFBGA, | compliant | EAR99 | 8542.32.00.32 | Micron | 2016-05-12 | ||||||||||||||||||
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IS43LD16320A-25BLI
Integrated Silicon Solution Inc
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$8.1241 | Yes | Active | 536.8709 Mbit | 16 | 32MX16 | 1.2 V | FOUR BANK PAGE BURST | LPDDR2 DRAM | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | YES | 1.3 V | 1.14 V | CMOS | INDUSTRIAL | R-PBGA-B134 | e1 | 3 | 85 °C | -40 °C | 260 | 10 | 134 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 650 µm | BOTTOM | 1.1 mm | 11.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.28 | Integrated Silicon Solution Inc. | |||||||||||||
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IS43LD32160A-25BLI
Integrated Silicon Solution Inc
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$8.3450 | Yes | Active | 536.8709 Mbit | 32 | 16MX32 | 1.2 V | FOUR BANK PAGE BURST | LPDDR2 DRAM | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 1.3 V | 1.14 V | CMOS | INDUSTRIAL | R-PBGA-B134 | e1 | 85 °C | -40 °C | 260 | 10 | 134 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 650 µm | BOTTOM | 1.1 mm | 11.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.28 | Integrated Silicon Solution Inc. | ||||||||||||||
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IS43LD32320D-18BLI
Integrated Silicon Solution Inc
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$8.4922 | Active | 1.0737 Gbit | 32 | 32MX32 | 1.2 V | 10 ns | 533 MHz | 8192 | MULTI BANK PAGE BURST | LPDDR2 DRAM | SELF REFRESH, IT ALSO REQUIRES 1.2V NOMINAL SUPPLY | COMMON | 4,8,16 | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | YES | 4,8,16 | 1.5 mA | 220 µA | 1.3 V | 1.14 V | CMOS | R-PBGA-B134 | 85 °C | 134 | PLASTIC/EPOXY | VFBGA | BGA134,10X17,25 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 650 µm | BOTTOM | 1 mm | 11.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | compliant | ||||||||||||||||
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IS43LD16128C-18BLI
Integrated Silicon Solution Inc
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$9.1174 | Active | 2.1475 Gbit | 16 | 128MX16 | 1.2 V | 533 MHz | MULTI BANK PAGE BURST | LPDDR2 DRAM | also operates with 1.8v nom supply | COMMON | 4,8,16 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | YES | 4,8,16 | 10 mA | 210 µA | 1.3 V | 1.14 V | CMOS | R-PBGA-B134 | 85 °C | -40 °C | 260 | 134 | PLASTIC/EPOXY | TFBGA | BGA134,10X17,25 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 650 µm | BOTTOM | 1.1 mm | 11.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | , | unknown | EAR99 | 8542.32.00.36 | Integrated Silicon Solution Inc. | 2020-03-26 | ||||||||||
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IS43LD16640C-25BLI
Integrated Silicon Solution Inc
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$9.2304 | Yes | Active | 1.0737 Gbit | 16 | 64MX16 | 1.2 V | MULTI BANK PAGE BURST | LPDDR2 DRAM | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | YES | 1.3 V | 1.14 V | CMOS | INDUSTRIAL | R-PBGA-B134 | e1 | 3 | 85 °C | -40 °C | 260 | 10 | 134 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 650 µm | BOTTOM | 1.1 mm | 11.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.32 | Integrated Silicon Solution Inc. | 2016-03-14 | ||||||||||||
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IS43LD16640C-18BLI
Integrated Silicon Solution Inc
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$9.4146 | Yes | Active | 1.0737 Gbit | 16 | 64MX16 | 1.2 V | MULTI BANK PAGE BURST | LPDDR2 DRAM | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | YES | 1.3 V | 1.14 V | CMOS | INDUSTRIAL | R-PBGA-B134 | e1 | 85 °C | -40 °C | 260 | 10 | 134 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 650 µm | BOTTOM | 1.1 mm | 11.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.32 | Integrated Silicon Solution Inc. | 2016-03-14 |