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CY7C1314KV18-250BZXI
Cypress Semiconductor
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$4.2525 | Yes | Transferred | 18.8744 Mbit | 36 | 512KX36 | 1.8 V | 450 ps | QDR SRAM | PIPELINED ARCHITECTURE | 1 | 512000 | 524.288 k | SYNCHRONOUS | PARALLEL | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | CYPRESS SEMICONDUCTOR CORP | FBGA-165 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||||
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CY7C1312KV18-250BZXI
Cypress Semiconductor
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$4.8600 | Yes | Transferred | 18.8744 Mbit | 18 | 1MX18 | 1.8 V | 450 ps | 250 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 250 mA | 1.7 V | 560 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | CYPRESS SEMICONDUCTOR CORP | 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | compliant | 3A991 | 8542.32.00.41 | BGA | 165 | ||||
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CY7C1314KV18-250BZI
Cypress Semiconductor
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$5.3258 | No | Transferred | 18.8744 Mbit | 36 | 512KX36 | 1.8 V | 450 ps | 250 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 250 mA | 1.7 V | 670 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 220 | 20 | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | Tin/Lead (Sn/Pb) | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | CYPRESS SEMICONDUCTOR CORP | 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | compliant | 3A991.B.2.A | 8542.32.00.41 | BGA | 165 | ||||
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CY7C1414KV18-250BZXI
Cypress Semiconductor
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$7.2900 | Yes | Transferred | 37.7487 Mbit | 36 | 1MX36 | 1.8 V | 450 ps | 250 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 260 mA | 1.7 V | 730 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | CYPRESS SEMICONDUCTOR CORP | 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | compliant | 3A991 | 8542.32.00.41 | BGA | 165 | ||||
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GS88132CGD-150I
GSI Technology
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$8.8549 | Yes | Active | 8.3886 Mbit | 32 | 256KX32 | 3.3 V | 7.5 ns | CACHE SRAM | ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE | 1 | 256000 | 262.144 k | SYNCHRONOUS | SERIAL | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | GSI TECHNOLOGY | LBGA, | compliant | 3A991.B.2.B | 8542.32.00.41 | BGA | 165 | ||||||||||||||
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GS88236CGD-200I
GSI Technology
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$8.8549 | Yes | Yes | Active | 9.4372 Mbit | 36 | 256KX36 | 2.5 V | 6.5 ns | CACHE SRAM | PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY | 1 | 256000 | 262.144 k | SYNCHRONOUS | PARALLEL | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | GSI TECHNOLOGY | LBGA, | compliant | 3A991.B.2.B | 8542.32.00.41 | BGA | 165 | |||||||||||
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GS88118CGD-150I
GSI Technology
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$8.8738 | Yes | Active | 9.4372 Mbit | 18 | 512KX18 | 3.3 V | 7.5 ns | CACHE SRAM | ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE | 1 | 512000 | 524.288 k | SYNCHRONOUS | SERIAL | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | GSI TECHNOLOGY | LBGA, | compliant | 3A991.B.2.B | 8542.32.00.41 | BGA | 165 | GSI TECHNOLOGY | |||||||||||||
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GS88136CD-250I
GSI Technology
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$10.0516 | No | Active | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 5.5 ns | CACHE SRAM | ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE | 1 | 256000 | 262.144 k | SYNCHRONOUS | SERIAL | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | GSI TECHNOLOGY | LBGA, | compliant | 3A991.B.2.B | 8542.32.00.41 | BGA | 165 | ||||||||||||||
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GS816118DGD-200
GSI Technology
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$12.3069 | Yes | Active | 18.8744 Mbit | 18 | 1MX18 | 2.5 V | 6.5 ns | CACHE SRAM | FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | PARALLEL | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PBGA-B165 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | GSI TECHNOLOGY | LBGA, | compliant | 3A991.B.2.B | 8542.32.00.41 | BGA | 165 | ||||||||||||||||
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GS8162Z18DD-200I
GSI Technology
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$13.1168 | No | Active | 18.8744 Mbit | 18 | 1MX18 | 2.5 V | 6.5 ns | ZBT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | PARALLEL | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e0 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | Tin/Lead (Sn/Pb) | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | GSI TECHNOLOGY | LBGA, | compliant | 3A991.B.2.B | 8542.32.00.41 | BGA | 165 |