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K4S56323PF-HF1L
Samsung Semiconductor
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Check for Price | Yes | Active | 268.4355 Mbit | 32 | 8MX32 | 1.8 V | 7 ns | 111 MHz | 4096 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 8000000 | 8.3886 M | 1,2,4,8,FP | 300 µA | 160 µA | CMOS | OTHER | R-PBGA-B90 | Not Qualified | 70 °C | -25 °C | 90 | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.24 | |||||||||||||||||||||
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K4S56323PF-HG75
Samsung Semiconductor
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Check for Price | Yes | Active | 268.4355 Mbit | 32 | 8MX32 | 1.8 V | 6 ns | 133 MHz | 4096 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 8000000 | 8.3886 M | 1,2,4,8,FP | 300 µA | 160 µA | CMOS | OTHER | R-PBGA-B90 | Not Qualified | 85 °C | -25 °C | 90 | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.24 | |||||||||||||||||||||
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K4S56323PF-FF75
Samsung Semiconductor
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Check for Price | No | Active | 268.4355 Mbit | 32 | 8MX32 | 1.8 V | 6 ns | 133 MHz | 4096 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 8000000 | 8.3886 M | 1,2,4,8,FP | 300 µA | 160 µA | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e0 | 70 °C | -25 °C | 90 | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.24 | |||||||||||||||||||
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K4S56323PF-HF90
Samsung Semiconductor
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Check for Price | Yes | Active | 268.4355 Mbit | 32 | 8MX32 | 1.8 V | 7 ns | 111 MHz | 4096 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 8000000 | 8.3886 M | 1,2,4,8,FP | 300 µA | 160 µA | CMOS | OTHER | R-PBGA-B90 | Not Qualified | 70 °C | -25 °C | 90 | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.24 | |||||||||||||||||||||
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K4S56323PF-HG900
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 268.4355 Mbit | 32 | 8MX32 | 1.8 V | 7 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e1 | 3 | 85 °C | -25 °C | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.24 | BGA | TFBGA, | 90 | ||||||||||||
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K4S56323PF-HF750
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 268.4355 Mbit | 32 | 8MX32 | 1.8 V | 6 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e1 | 3 | 70 °C | -25 °C | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.24 | BGA | TFBGA, | 90 | ||||||||||||
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K4S56323PF-HG1L0
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 268.4355 Mbit | 32 | 8MX32 | 1.8 V | 7 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e1 | 3 | 85 °C | -25 °C | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.24 | BGA | TFBGA, | 90 | ||||||||||||
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K4S56323PF-FF1L0
Samsung Semiconductor
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Check for Price | No | Obsolete | 268.4355 Mbit | 32 | 8MX32 | 1.8 V | 7 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | 70 °C | -25 °C | NOT SPECIFIED | NOT SPECIFIED | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.24 | BGA | TFBGA, | 90 | |||||||||||||
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K4S56323PF-FG90
Samsung Semiconductor
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Check for Price | No | Active | 268.4355 Mbit | 32 | 8MX32 | 1.8 V | 7 ns | 111 MHz | 4096 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 8000000 | 8.3886 M | 1,2,4,8,FP | 300 µA | 160 µA | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e0 | 85 °C | -25 °C | 90 | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.24 | |||||||||||||||||||
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K4S56323PF-HF900
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 268.4355 Mbit | 32 | 8MX32 | 1.8 V | 7 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e1 | 3 | 70 °C | -25 °C | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.24 | BGA | TFBGA, | 90 |