Parametric results for: K4S56323PF under DRAMs

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Manufacturer Part Number: k4s56323pf
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K4S56323PF-HF1L
Samsung Semiconductor
Check for Price Yes Active 268.4355 Mbit 32 8MX32 1.8 V 7 ns 111 MHz 4096 SYNCHRONOUS DRAM COMMON 1,2,4,8 8000000 8.3886 M 1,2,4,8,FP 300 µA 160 µA CMOS OTHER R-PBGA-B90 Not Qualified 70 °C -25 °C 90 PLASTIC/EPOXY FBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24
K4S56323PF-HG75
Samsung Semiconductor
Check for Price Yes Active 268.4355 Mbit 32 8MX32 1.8 V 6 ns 133 MHz 4096 SYNCHRONOUS DRAM COMMON 1,2,4,8 8000000 8.3886 M 1,2,4,8,FP 300 µA 160 µA CMOS OTHER R-PBGA-B90 Not Qualified 85 °C -25 °C 90 PLASTIC/EPOXY FBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24
K4S56323PF-FF75
Samsung Semiconductor
Check for Price No Active 268.4355 Mbit 32 8MX32 1.8 V 6 ns 133 MHz 4096 SYNCHRONOUS DRAM COMMON 1,2,4,8 8000000 8.3886 M 1,2,4,8,FP 300 µA 160 µA CMOS OTHER R-PBGA-B90 Not Qualified e0 70 °C -25 °C 90 PLASTIC/EPOXY FBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH YES Tin/Lead (Sn/Pb) BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24
K4S56323PF-HF90
Samsung Semiconductor
Check for Price Yes Active 268.4355 Mbit 32 8MX32 1.8 V 7 ns 111 MHz 4096 SYNCHRONOUS DRAM COMMON 1,2,4,8 8000000 8.3886 M 1,2,4,8,FP 300 µA 160 µA CMOS OTHER R-PBGA-B90 Not Qualified 70 °C -25 °C 90 PLASTIC/EPOXY FBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24
K4S56323PF-HG900
Samsung Semiconductor
Check for Price Yes Obsolete 268.4355 Mbit 32 8MX32 1.8 V 7 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 1.95 V 1.7 V CMOS OTHER R-PBGA-B90 Not Qualified e1 3 85 °C -25 °C 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24 BGA TFBGA, 90
K4S56323PF-HF750
Samsung Semiconductor
Check for Price Yes Obsolete 268.4355 Mbit 32 8MX32 1.8 V 6 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 1.95 V 1.7 V CMOS OTHER R-PBGA-B90 Not Qualified e1 3 70 °C -25 °C 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24 BGA TFBGA, 90
K4S56323PF-HG1L0
Samsung Semiconductor
Check for Price Yes Obsolete 268.4355 Mbit 32 8MX32 1.8 V 7 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 1.95 V 1.7 V CMOS OTHER R-PBGA-B90 Not Qualified e1 3 85 °C -25 °C 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24 BGA TFBGA, 90
K4S56323PF-FF1L0
Samsung Semiconductor
Check for Price No Obsolete 268.4355 Mbit 32 8MX32 1.8 V 7 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 1.95 V 1.7 V CMOS OTHER R-PBGA-B90 Not Qualified 70 °C -25 °C NOT SPECIFIED NOT SPECIFIED 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24 BGA TFBGA, 90
K4S56323PF-FG90
Samsung Semiconductor
Check for Price No Active 268.4355 Mbit 32 8MX32 1.8 V 7 ns 111 MHz 4096 SYNCHRONOUS DRAM COMMON 1,2,4,8 8000000 8.3886 M 1,2,4,8,FP 300 µA 160 µA CMOS OTHER R-PBGA-B90 Not Qualified e0 85 °C -25 °C 90 PLASTIC/EPOXY FBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH YES Tin/Lead (Sn/Pb) BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24
K4S56323PF-HF900
Samsung Semiconductor
Check for Price Yes Obsolete 268.4355 Mbit 32 8MX32 1.8 V 7 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 1.95 V 1.7 V CMOS OTHER R-PBGA-B90 Not Qualified e1 3 70 °C -25 °C 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24 BGA TFBGA, 90