Parametric results for: IPB038N12N3 G under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

900.0 mJ 3

3 hits Apply

DRAIN 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

120 V 3

3 hits Apply

Drain Current-Max (ID) (1)

120 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

3.8 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-263AB 3

3 hits Apply

R-PSSO-G2 3

3 hits Apply

e3 2

3 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 Rochester Electronics LLC 1

3 hits Apply

1 2 NOT SPECIFIED 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

175.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Active 3

3 hits Apply

No 1 Yes 2

3 hits Apply

NOT SPECIFIED 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

300 W 1

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply