Parametric results for: DTA114EC P T216 under Small Signal Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTANCE RATIO IS 1 5 BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY 2 BUILT IN BIAS RESISTANCE RATIO IS 1; HIGH RELIABILITY 2 BUILT IN BIAS RESISTOR RATIO IS 1 1 BUILT-IN BIAS RESISTANCE RATIO IS 1 1 BUILT-IN BIAS RESISTOR RATIO 1 1 BUILT-IN BIAS RESISTOR RATIO IS 1 5 DIGITAL, BUILT IN BIAS RESISTOR RATIO 1 1 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1 1

31 hits Apply

COLLECTOR 1

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Collector Current-Max (IC) (2)

50 mA 8 100 mA 11

Min (A) - Max (A)

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Collector-Emitter Voltage-Max (1)

50 V 16

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Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 19

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DC Current Gain-Min (hFE) (2)

20.0 2 30.0 19

Min - Max

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R-PDSO-G3 19

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e0 4 e1 2 e3 13

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Manufacturer (11)

Comchip Technology Corporation Ltd 1 Diodes Incorporated 7 Galaxy Microelectronics 2 Galaxy Semi-Conductor Co Ltd 1 Jiangsu Changjiang Electronics Technology Co Ltd 1 Micro Commercial Components 6 Rectron Semiconductor 1 ROHM Semiconductor 6 Secos Corporation 2 Taiwan Semiconductor 3 Yangzhou Yangjie Electronics Co Ltd 1

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1 13

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Number of Elements (1)

1 22

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Number of Terminals (1)

3 19

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150.0 °C 6

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PLASTIC/EPOXY 19

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RECTANGULAR 19

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SMALL OUTLINE 19

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Active 20 Contact Manufacturer 1 Not Recommended 2 Obsolete 8

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No 1 Yes 6

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240 1 260 10 NOT SPECIFIED 6

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Polarity/Channel Type (2)

NPN 1 PNP 20

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150 mW 1 200 mW 3

Min (W) - Max (W)

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200 mW 9

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Surface Mount (1)

YES 22

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Transition Frequency-Nom (fT) (1)

250 MHz 18

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