Parametric results for: BLF8G20LS200V under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 3

5 hits Apply

Configuration (1)

SINGLE 3

5 hits Apply

DS Breakdown Voltage-Min (1)

65 V 3

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

5 hits Apply

Highest Frequency Band (1)

L BAND 3

5 hits Apply

R-CQFP-X6 3

5 hits Apply

Manufacturer (2)

Ampleon 4 NXP Semiconductors 1

5 hits Apply

Number of Elements (1)

1 3

5 hits Apply

Number of Terminals (1)

6 3

5 hits Apply

ENHANCEMENT MODE 3

5 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

5 hits Apply

RECTANGULAR 3

5 hits Apply

FLATPACK 3

5 hits Apply

Obsolete 4 Transferred 1

5 hits Apply

NOT SPECIFIED 5

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

5 hits Apply

Surface Mount (1)

YES 3

5 hits Apply