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Parametric » Memory » SRAMs

Parametric results for: 7510-16 QD under SRAMs

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Memory IC Type: QDR SRAM
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CY7C1314KV18-250BZXI
 Cypress Semiconductor 		$4.2525 Yes Transferred 18.8744 Mbit 36 512KX36 1.8 V 450 ps QDR SRAM PIPELINED ARCHITECTURE 1 512000 524.288 k SYNCHRONOUS PARALLEL 1.9 V 1.7 V CMOS INDUSTRIAL R-PBGA-B165 e1 3 85 °C -40 °C 260 30 165 PLASTIC/EPOXY LBGA RECTANGULAR GRID ARRAY, LOW PROFILE YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm CYPRESS SEMICONDUCTOR CORP FBGA-165 compliant 3A991.B.2.A 8542.32.00.41
CY7C1312KV18-250BZXI
 Cypress Semiconductor 		$4.8600 Yes Transferred 18.8744 Mbit 18 1MX18 1.8 V 450 ps 250 MHz QDR SRAM PIPELINED ARCHITECTURE SEPARATE 1 1000000 1.0486 M SYNCHRONOUS 3-STATE PARALLEL 250 mA 1.7 V 560 µA 1.9 V 1.7 V CMOS INDUSTRIAL R-PBGA-B165 Not Qualified e1 3 85 °C -40 °C 260 30 165 PLASTIC/EPOXY LBGA BGA165,11X15,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm CYPRESS SEMICONDUCTOR CORP 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 compliant 3A991 8542.32.00.41 BGA 165
CY7C1314KV18-250BZI
 Cypress Semiconductor 		$5.3258 No Transferred 18.8744 Mbit 36 512KX36 1.8 V 450 ps 250 MHz QDR SRAM PIPELINED ARCHITECTURE SEPARATE 1 512000 524.288 k SYNCHRONOUS 3-STATE PARALLEL 250 mA 1.7 V 670 µA 1.9 V 1.7 V CMOS INDUSTRIAL R-PBGA-B165 Not Qualified e0 3 85 °C -40 °C 220 20 165 PLASTIC/EPOXY LBGA BGA165,11X15,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES Tin/Lead (Sn/Pb) BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm CYPRESS SEMICONDUCTOR CORP 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 compliant 3A991.B.2.A 8542.32.00.41 BGA 165
CY7C1414KV18-250BZXI
 Cypress Semiconductor 		$7.2900 Yes Transferred 37.7487 Mbit 36 1MX36 1.8 V 450 ps 250 MHz QDR SRAM PIPELINED ARCHITECTURE SEPARATE 1 1000000 1.0486 M SYNCHRONOUS 3-STATE PARALLEL 260 mA 1.7 V 730 µA 1.9 V 1.7 V CMOS INDUSTRIAL R-PBGA-B165 Not Qualified e1 3 85 °C -40 °C 260 30 165 PLASTIC/EPOXY LBGA BGA165,11X15,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm CYPRESS SEMICONDUCTOR CORP 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 compliant 3A991 8542.32.00.41 BGA 165
GS8342D18BGD-333
 GSI Technology 		$24.9771 Yes Active 37.7487 Mbit 18 2MX18 1.8 V 450 ps 333 MHz QDR SRAM PIPELINED ARCHITECTURE SEPARATE 1 2000000 2.0972 M SYNCHRONOUS 3-STATE PARALLEL 205 mA 1.7 V 605 µA 1.9 V 1.7 V CMOS COMMERCIAL R-PBGA-B165 Not Qualified e1 3 70 °C 260 165 PLASTIC/EPOXY LBGA BGA165,11X15,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm GSI TECHNOLOGY LBGA, BGA165,11X15,40 compliant 3A991.B.2.B 8542.32.00.41 BGA 165 GSI TECHNOLOGY
GS8342DT37BGD-300
 GSI Technology 		$25.6818 Yes Yes Active 37.7487 Mbit 36 1MX36 1.8 V 450 ps 300 MHz QDR SRAM SEPARATE 1 1000000 1.0486 M SYNCHRONOUS 3-STATE PARALLEL 1.7 V 1.9 V 1.7 V CMOS OTHER R-PBGA-B165 Not Qualified e1 3 85 °C 260 165 PLASTIC/EPOXY LBGA BGA165,11X15,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES TIN SILVER COPPER BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm GSI TECHNOLOGY LBGA, BGA165,11X15,40 compliant 3A991.B.2.B 8542.32.00.41 BGA 165
GS8342Q18BD-250I
 GSI Technology 		$29.4589 No Active 37.7487 Mbit 18 2MX18 1.8 V 450 ps 250 MHz QDR SRAM PIPELINED ARCHITECTURE SEPARATE 1 2000000 2.0972 M SYNCHRONOUS 3-STATE PARALLEL 215 mA 1.7 V 675 µA 1.9 V 1.7 V CMOS INDUSTRIAL R-PBGA-B165 Not Qualified e0 85 °C -40 °C 165 PLASTIC/EPOXY LBGA BGA165,11X15,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES Tin/Lead (Sn/Pb) BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm GSI TECHNOLOGY LBGA, BGA165,11X15,40 compliant 3A991.B.2.B 8542.32.00.41 BGA 165 GSI TECHNOLOGY
GS8342Q36BGD-250I
 GSI Technology 		$29.4589 Yes Active 37.7487 Mbit 36 1MX36 1.8 V 450 ps 250 MHz QDR SRAM PIPELINED ARCHITECTURE SEPARATE 1 1000000 1.0486 M SYNCHRONOUS 3-STATE PARALLEL 215 mA 1.7 V 835 µA 1.9 V 1.7 V CMOS INDUSTRIAL R-PBGA-B165 Not Qualified e1 3 85 °C -40 °C 260 165 PLASTIC/EPOXY LBGA BGA165,11X15,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm GSI TECHNOLOGY LBGA, BGA165,11X15,40 compliant 3A991.B.2.B 8542.32.00.41 BGA 165 GSI TECHNOLOGY
IS61QDB21M18A-250B4LI
 Integrated Silicon Solution Inc 		$35.7417 Yes Active 18.8744 Mbit 18 1MX18 1.8 V 450 ps 250 MHz QDR SRAM PIPELINED ARCHITECTURE SEPARATE 1 1000000 1.0486 M SYNCHRONOUS 3-STATE PARALLEL 270 mA 1.7 V 950 µA 1.89 V 1.71 V CMOS INDUSTRIAL R-PBGA-B165 Not Qualified 85 °C -40 °C 165 PLASTIC/EPOXY LBGA BGA165,11X15,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm INTEGRATED SILICON SOLUTION INC LBGA, BGA165,11X15,40 compliant 3A991.B.2.A 8542.32.00.41 BGA 165
IS61QDB21M18A-250M3L
 Integrated Silicon Solution Inc 		$36.3565 Yes Yes Active 18.8744 Mbit 18 1MX18 1.8 V 450 ps 250 MHz QDR SRAM PIPELINED ARCHITECTURE SEPARATE 1 1000000 1.0486 M SYNCHRONOUS 3-STATE PARALLEL 270 mA 1.7 V 950 µA 1.89 V 1.71 V CMOS COMMERCIAL R-PBGA-B165 Not Qualified e1 3 70 °C 165 PLASTIC/EPOXY LBGA BGA165,11X15,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 1 mm BOTTOM 1.4 mm 17 mm 15 mm INTEGRATED SILICON SOLUTION INC LBGA, BGA165,11X15,40 compliant 3A991.B.2.A 8542.32.00.41 BGA 165
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