Parametric results for: 500 ma 40 v pnp si sm sig... under Small Signal Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTANCE RATIO IS 1 56 BUILT IN BIAS RESISTANCE RATIO IS 1.0 4 BUILT IN BIAS RESISTANCE RATIO IS 10 12 BUILT IN BIAS RESISTANCE RATIO IS 2.13 16 BUILT IN BIAS RESISTANCE RATIO IS 4.55 10 BUILT IN BIAS RESISTOR 19 BUILT IN BIAS RESISTOR RATIO 1 34 BUILT IN BIAS RESISTOR RATIO 10 7 BUILT IN BIAS RESISTOR RATIO 18.52 4 BUILT IN BIAS RESISTOR RATIO 21.364 3 BUILT IN BIAS RESISTOR RATIO 3.030 3 BUILT IN BIAS RESISTOR RATIO 4.54 4 BUILT IN BIAS RESISTOR RATIO 4.545 3 BUILT IN BIAS RESISTOR RATIO IS 1 96 BUILT IN BIAS RESISTOR RATIO IS 4.545 22 BUILT IN BIAS RESISTOR RATIO IS 4.55 3 BUILT-IN BIAS RESISTANCE RATIO IS 21.28 3 BUILT-IN BIAS RESISTANCE RATIO IS 45.45 3 BUILT-IN BIAS RESISTOR 38 BUILT-IN BIAS RESISTOR RATIO 0.1 4 BUILT-IN BIAS RESISTOR RATIO 1 4 BUILT-IN BIAS RESISTOR RATIO IS 1 110 BUILT-IN BIAS RESISTOR RATIO IS 1.48 4 BUILT-IN BIAS RESISTOR RATIO IS 10 25 BUILT-IN BIAS RESISTOR RATIO IS 18.52 4 BUILT-IN BIAS RESISTOR RATIO IS 21.28 4 BUILT-IN BIAS RESISTOR RATIO IS 3 4 BUILT-IN BIAS RESISTOR RATIO IS 4.5 16 BUILT-IN BIAS RESISTOR RATIO IS 4.54 6 BUILT-IN BIAS RESISTOR RATIO IS 4.545 5 BUILT-IN BIAS RESISTOR RATIO IS 4.55 14 DIGITAL 61 DIGITAL, BUILT IN BIAS RESISTOR 10 DIGITAL, BUILT IN BIAS RESISTOR RATIO 1 6 DIGITAL, BUILT-IN BIAS RESISTOR 16 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1 54 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 10 13 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 21.3 11 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 3 13 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.5 14 EUROPEAN PART NUMBER 281 HIGH CURRENT 8 HIGH CURRENT DRIVER 200 HIGH RELIABILITY 29 HIGH SPEED SATURATED SWITCHING 81 HIGH VOLTAGE 75 LOW NOISE 152 TELECOM TRANSISTOR 28 TELECOM TRANSISTOR, EUROPEAN PART NUMBER 12 TR, 7 INCH: 3000 5

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BASE 4 COLLECTOR 433 ISOLATED 18

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Collector Current-Max (IC) (1)

500 mA 9,392

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1.6 pF 148 2.5 pF 8 2.8 pF 58 4 pF 14 4.5 pF 20 5 pF 16 6 pF 400 6.5 pF 3 7 pF 35 8 pF 170 9 pF 10 10 pF 166 11 pF 8 12 pF 12 13 pF 14 15 pF 191 18 pF 1 20 pF 61 30 pF 103

Min (pF) - Max (pF)

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Collector-Emitter Voltage-Max (36)

5 V 3 10 V 44 12 V 79 15 V 71 16 V 47 18 V 2 20 V 285 25 V 724 30 V 735 32 V 275 35 V 156 40 V 523 45 V 1,100 50 V 1,024 60 V 654 64 V 2 65 V 2 70 V 26 72 V 8 75 V 1 80 V 863 90 V 4 100 V 81 120 V 46 140 V 31 150 V 80 160 V 12 180 V 5 200 V 300 250 V 124 300 V 821 350 V 156 400 V 314 450 V 10 500 V 3 600 V 10

Min (V) - Max (V)

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Configuration (13)

COMMON EMITTER, 2 ELEMENTS 6 COMMON EMITTER, 5 ELEMENTS WITH BUILT-IN RESISTOR 1 DARLINGTON 844 DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 15 SEPARATE, 2 ELEMENTS 154 SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR 27 SEPARATE, 4 ELEMENTS 5 SINGLE 7,333 Single 7 SINGLE WITH BUILT-IN DIODE 8 SINGLE WITH BUILT-IN FET 1 SINGLE WITH BUILT-IN FET AND DIODE 7 SINGLE WITH BUILT-IN RESISTOR 813

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DC Current Gain-Min (hFE) (50)

10.0 18 15.0 96 20.0 274 25.0 862 30.0 238 33.0 60 35.0 54 38.0 6 39.0 39 40.0 969 45.0 6 47.0 93 50.0 915 55.0 7 56.0 266 60.0 310 64.0 28 65.0 22 70.0 185 75.0 198 78.0 23 80.0 81 82.0 187 85.0 78 90.0 68 96.0 26 100.0 1,608 110.0 20 112.0 33 120.0 341 130.0 40 140.0 51 144.0 36 150.0 45 160.0 305 170.0 95 180.0 92 190.0 25 200.0 131 215.0 10 250.0 221 270.0 47 280.0 12 300.0 101 2000.0 110 4000.0 47 5000.0 8 10000.0 383 20000.0 304 30000.0 7

Min - Max

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DS Breakdown Voltage-Min (1)

20 V 1

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Drain Current-Max (ID) (1)

224 mA 1

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Drain-source On Resistance-Max (1)

1.4 Ω 1

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METAL-OXIDE SEMICONDUCTOR 1

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MO-041BB 66 TO-105 24 TO-116 3 TO-126 27 TO-18 67 TO-205AA 2 TO-205AD 63 TO-206AA 31 TO-222AB 5 TO-226 17 TO-226AA 52 TO-226AE 10 TO-236 148 TO-236AA 12 TO-236AB 457 TO-236AF 8 TO-237AA 9 TO-243 5 TO-243AA 30 TO-252 1 TO-261AA 38 TO-39 78 TO-46 1 TO-5 96 TO-50 2 TO-9 2 TO-92 3,126

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O-CRDB-F3 2 O-MBCY-W2 2 O-MBCY-W3 356 O-MBCY-W8 8 O-MBFM-P2 4 O-PBCY-T 3 O-PBCY-T3 3,046 O-PBCY-W3 419 O-PBCY-W4 10 O-PBFM-W3 2 O-XBCY-W3 3 O-XBCY-W4 12 R-CDIP-T14 2 R-CDSO-N3 135 R-CDSO-N4 18 R-CDSO-N6 66 R-PBCC-N3 16 R-PBCY-T3 5 R-PDIP-T14 3 R-PDIP-T6 10 R-PDSO-F3 64 R-PDSO-F4 1 R-PDSO-F5 1 R-PDSO-F6 28 R-PDSO-G3 3,009 R-PDSO-G4 97 R-PDSO-G5 14 R-PDSO-G6 111 R-PDSO-N3 37 R-PSFM-T3 52 R-PSIP-T3 677 R-PSIP-W3 255 R-PSSO-F3 193 R-PSSO-G2 81 R-PSSO-G3 199 R-PZIP-T12 1 R-XDSO-N3 22 R-XUUC-N2 2 S-PDSO-N6 2 S-XUUC-N2 13

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e0 1,623 e1 340 e2 70 e3 1,463 e3/e2 1 e3/e4 4 e4 151 e6 61

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Manufacturer (101)

Advanced Semiconductor Inc 16 Allegro MicroSystems LLC 93 Bytesonic Corporation 23 Central Semiconductor Corp 230 CHENMKO Enterprise Co Ltd 4 Comchip Technology Corporation Ltd 7 Continental Device India Ltd 153 Crimson Semiconductor Inc 55 CRYSTALONICS Inc 3 DB Lectro Inc 2 Defense Logistics Agency 5 Diodes Incorporated 574 Diotec Semiconductor AG 26 EDI Diodes (Electronic Devices Inc) 6 Electronic Transistors Corp 11 Fairchild Semiconductor Corporation 522 Fenghua (HK) Electronics Ltd 13 Formosa Microsemi Co Ltd 12 Galaxy Microelectronics 47 Galaxy Semi-Conductor Co Ltd 42 General Diode Corp 2 General Instrument Corp 2 General Transistor Corp 5 GPD Optoelectronics Corp 25 Hi-Tron Semiconductor Corp 11 Hitachi Ltd 79 HSMC Corporation 3 Infineon Technologies AG 142 International Devices Inc 14 Isahaya Electronics Corporation 5 Jiangsu Changjiang Electronics Technology Co Ltd 10 KEC 83 Kingwell Technology Corp Ltd 3 Kodenshi Corporation 11 Kodenshi Sensing 9 Kuwait Semiconductor Co Ltd 11 Lite-On Semiconductor Corporation 12 Loras Industries Inc 2 LRC Leshan Radio Co Ltd 147 MACOM 2 MERITEK Electronics Corporation 2 Micro Commercial Components 148 Micro Electronics Corporation 67 Micro Electronics Ltd 17 Microchip Technology Inc 4 Microsemi Corporation 7 Minireel Components 18 Mitsubishi Electric 14 Motorola Mobility LLC 498 Motorola Semiconductor Products 498 National Semiconductor Corporation 189 NEC Electronics America Inc 46 NEC Electronics Group 118 New England Semiconductor 11 New Jersey Semiconductor Products Inc 39 Nexperia 328 NTE Electronics Inc 14 NXP Semiconductors 630 onsemi 496 Panasonic Electronic Components 370 PanJit Semiconductor 62 Philips Semiconductors 17 Promax-Johnton Electronic Corporation 8 Raytheon Semiconductor 3 Rectron Semiconductor 22 Renesas Electronics Corporation 200 Rochester Electronics LLC 167 ROHM Semiconductor 763 Samsung Semiconductor 80 SANYO Electric Co Ltd 143 SANYO Semiconductor Co Ltd 83 Secos Corporation 46 Semicoa Semiconductors 1 Semiconductor Technology Inc 13 Semiconductors Inc 28 Semitronics Corp 13 Siemens 98 Silicon Transistor Corporation 1 Solid State Devices Inc (SSDI) 8 Space Power Electronics Inc 11 STMicroelectronics 66 Surge Components Inc 6 Swampscott Electronics Co Inc 8 SY Sinyork Co Ltd 2 SynSemi Inc 5 Taitron Components Inc 10 Taiwan Semiconductor 21 Texas Instruments 500 Thales Group 1 Toshiba America Electronic Components 136 TT Electronics Power and Hybrid / Semelab Limited 162 TT Electronics Resistors 162 Unisonic Technologies Co Ltd 111 Vishay Intertechnologies 1 Vishay Semiconductors 4 VPT Components 2 WEITRON INTERNATIONAL CO., LTD. 7 Weitronic Enterprise Co Ltd 2 YAGEO Corporation 48 Yangzhou Yangjie Electronics Co Ltd 29 Zetex / Diodes Inc 406

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1 1,259 3 1 NOT APPLICABLE 41 NOT SPECIFIED 82

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Number of Elements (4)

1 9,139 2 189 4 5 5 1

Min - Max

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Number of Terminals (8)

12 1 14 5 2 102 3 8,492 4 138 5 15 6 217 8 8

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ENHANCEMENT MODE 1

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85.0 °C 3 100.0 °C 85 125.0 °C 133 135.0 °C 8 140.0 °C 37 150.0 °C 4,940 175.0 °C 168 200.0 °C 465

Min (°C) - Max (°C)

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-65.0 °C 165 -55.0 °C 229

Min (°C) - Max (°C)

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CERAMIC, METAL-SEALED COFIRED 223 METAL 370 PLASTIC/EPOXY 8,338 UNSPECIFIED 52

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RECTANGULAR 5,099 ROUND 3,867 SQUARE 15

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CHIP CARRIER 16 CYLINDRICAL 3,864 DISK BUTTON 2 FLANGE MOUNT 58 IN-LINE 948 SMALL OUTLINE 4,078 UNCASED CHIP 15

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Active 2,274 Contact Manufacturer 420 End Of Life 61 Lifetime Buy 1 Not Recommended 52 Obsolete 5,024 Transferred 1,559 Unknown 1

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No 519 Yes 1,058

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235 182 240 62 250 8 255 2 260 1,140 NOT APPLICABLE 35 NOT SPECIFIED 1,058

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Polarity/Channel Type (1)

PNP 9,392

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100 mW 13 150 mW 28 200 mW 50 225 mW 49 250 mW 23 300 mW 14 330 mW 39 350 mW 24 360 mW 21 400 mW 3 500 mW 19 600 mW 1 625 mW 114 1 W 36 1.5 W 698 1.7 W 3 1.8 W 18 2 W 36 2.5 W 202 5 W 8 10 W 29 20 W 1

Min (W) - Max (W)

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100 mW 30 120 mW 1 125 mW 1 150 mW 161 200 mW 449 210 mW 1 225 mW 147 250 mW 138 290 mW 8 300 mW 427 310 mW 6 325 mW 1 330 mW 65 345 mW 11 350 mW 136 360 mW 55 365 mW 3 370 mW 2 400 mW 76 415 mW 2 425 mW 2 430 mW 4 460 mW 6 500 mW 111 550 mW 1 600 mW 144 620 mW 47 625 mW 544 626 mW 14 680 mW 1 700 mW 17 710 mW 2 730 mW 13 750 mW 13 800 mW 72 830 mW 2 850 mW 6 900 mW 18 1 W 193 1.3 W 2 1.5 W 88 1.7 W 3 1.8 W 11 2 W 24 2.5 W 6 2.75 W 4 5 W 24 6 W 4 10 W 21 15 W 7

Min (W) - Max (W)

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Surface Mount (2)

NO 5,044 YES 4,316

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Transition Frequency-Nom (fT) (50)

750 kHz 3 800 kHz 1 1 MHz 32 1.2 MHz 20 1.3 MHz 12 1.5 MHz 10 2 MHz 1 2.5 MHz 1 3 MHz 7 5 MHz 1 5.6 MHz 1 7 MHz 2 10 MHz 52 12 MHz 56 15 MHz 20 20 MHz 39 25 MHz 3 30 MHz 134 35 MHz 19 38 MHz 3 40 MHz 183 45 MHz 25 50 MHz 1,541 60 MHz 190 70 MHz 7 75 MHz 97 80 MHz 300 100 MHz 1,355 110 MHz 20 120 MHz 306 125 MHz 485 130 MHz 132 140 MHz 108 150 MHz 727 160 MHz 2 170 MHz 15 180 MHz 33 200 MHz 1,477 220 MHz 75 250 MHz 175 260 MHz 33 280 MHz 27 300 MHz 73 340 MHz 5 350 MHz 4 360 MHz 2 400 MHz 155 490 MHz 13 520 MHz 7 690 MHz 2

Min (MHz) - Max (MHz)

9,392 hits Apply