Parametric results for: 5-volt flash 64kx16 under Flash Memories

All Filters Access Time-Max Additional Feature Alternate Memory Width Boot Block Command User Interface Data Polling Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Parallel/Serial Power Supplies Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (15)

25 ns 4 35 ns 30 40 ns 3 45 ns 104 50 ns 53 55 ns 114 70 ns 335 85 ns 4 90 ns 258 100 ns 121 120 ns 252 150 ns 175 170 ns 48 200 ns 38 250 ns 10

Min (ns) - Max (ns)

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10 YEAR DATA RETENTION; 100000 PROGRAM/ERASE CYCLES 46 100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK; BLOCK ERASE 144 10K ERASE/PROGRAM CYCLES 6 10K PROGRAM/ ERASE CYCLE; DATA RETENTION= 10 YEARS 15 1K PROGRAM/ ERASE CYCLE; DATA RETENTION= 10 YEARS 15 AUTOMATIC WRITE 14 AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION 28 BOTTOM BOOT BLOCK 185 BULK ERASE 158 CONFG AS 64K X 16; BOTTOM BOOT BLOCK 54 CONFG AS 64K X 16; TOP BOOT BLOCK 54 HARDWARE DATA PROTECTION 24 HARDWARE DATA PROTECTION; 10 YEARS DATA RETENTION 12 HARDWARE DATA PROTECTION; 10-YEARS DATA RETENTION; ENDURANCE 10K CYCLES 2 HARDWARE DATA PROTECTION; 20 YEARS DATA RETENTION 24 HARDWARE DATA PROTECTION; 20-YEARS DATA RETENTION; ENDURANCE 10K CYCLES 6 SOFTWARE CONTROLLED PROGRAM/ERASE 3 SOFTWARE CONTROLLED PROGRAM/ERASE; 10K ERASE/PROGRAM CYCLES 12 TOP BOOT BLOCK 109

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8 442

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BOTTOM 574 TOP 253

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NO 67 YES 1,016

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NO 364 YES 731

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10 90 20 30 100 12

Min - Max

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100.0 Write/Erase Cycles 48 1000.0 Write/Erase Cycles 72 10000.0 Write/Erase Cycles 123 100000.0 Write/Erase Cycles 12

Min (Write/EraseCycles) - Max (Write/EraseCycles)

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R-PBGA-B48 12 R-PDIP-T40 120 R-PDSO-G40 543 R-PDSO-G44 166 R-PDSO-G48 304 R-PDSO-G56 4 S-CQCC-N44 16 S-PBGA-B64 4 S-PQCC-J44 380

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e0 904 e3 78 e3/e6 10

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8 mm 12 9 mm 4 12.4 mm 441 16.55 mm 16 16.586 mm 38 16.5862 mm 304 18.35 mm 4 18.4 mm 190 25.87 mm 6 28.2 mm 86 28.5 mm 8 51.5 mm 3 52.18 mm 7 52.19 mm 12 52.197 mm 14 52.2 mm 6 52.455 mm 72

Min (mm) - Max (mm)

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Manufacturer (14)

AMD 72 Atmel Corporation 123 Catalyst Semiconductor 150 Cypress Semiconductor 80 Macronix International Co Ltd 20 Microchip Technology Inc 12 Mitsubishi Electric 26 Numonyx Memory Solutions 144 SANYO Electric Co Ltd 7 Silicon Storage Technology 12 Spansion 72 STMicroelectronics 526 Texas Instruments 192 Winbond Electronics Corp 113

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Memory Density (1)

1.0486 Mbit 1,549

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FLASH 1,549

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Memory Width (1)

16 1,477

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2 43 3 113

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1.0 1,223

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1,1 60 1,2,1,1 578 32 14

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40 663 44 562 48 316 56 4 64 4

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65.536 k 1,549

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64000.0 1,549

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ASYNCHRONOUS 1,220

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70.0 °C 757 85.0 °C 498 105.0 °C 38 125.0 °C 256

Min (°C) - Max (°C)

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-55.0 °C 76 -40.0 °C 708 0.0 °C 765

Min (°C) - Max (°C)

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Organization (1)

64KX16 1,549

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3-STATE 538

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CERAMIC, METAL-SEALED COFIRED 16 PLASTIC/EPOXY 1,533

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DIP 120 LBGA 4 QCCJ 380 QCCN 16 SOP 172 TFBGA 12 TSOP1 559 TSOP1-R 65 TSSOP 221

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BGA48,6X8,32 12 DIP40,.6 108 LCC44,.65SQ 15 LDCC44,.7SQ 223 SOP40,.56 6 SOP44,.63 164 TSSOP40,.55,20 6 TSSOP40,.56,20 241 TSSOP40,.8,20 30 TSSOP48,.8,20 290

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RECTANGULAR 1,151 SQUARE 398

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CHIP CARRIER 396 GRID ARRAY, LOW PROFILE 4 GRID ARRAY, THIN PROFILE, FINE PITCH 12 IN-LINE 120 SMALL OUTLINE 220 SMALL OUTLINE, THIN PROFILE 624 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 173

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128 words 67

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PARALLEL 1,549

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Power Supplies (1)

5 V 75

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Sector Size (5)

16K,8K,32K,64K 440 2K 24 32K 2 8K,4K,16K,32K 138 8K,56K 60

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Supply Voltage-Nom (Vsup) (3)

3 V 20 3.3 V 164 5 V 1,365

Min (V) - Max (V)

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