Parametric results for: 2sb857, under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

COLLECTOR 13

90 hits Apply

Collector Current-Max (IC) (1)

4 A 51

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Collector-Emitter Voltage-Max (2)

50 V 21 100 V 27

Min (V) - Max (V)

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Configuration (1)

SINGLE 51

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DC Current Gain-Min (hFE) (3)

60.0 20 100.0 16 160.0 15

Min - Max

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TO-126 9 TO-220AB 30 TO-252 9

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R-PSFM-T3 39 R-PSSO-G2 9

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e0 13

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Manufacturer (8)

Continental Device India Ltd 4 Hitachi Ltd 4 HSMC Corporation 3 Inchange Semiconductor Company Ltd 4 Micro Commercial Components 6 New Jersey Semiconductor Products Inc 4 Renesas Electronics Corporation 5 Unisonic Technologies Co Ltd 60

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1 6

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Number of Elements (1)

1 51

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Number of Terminals (2)

2 9 3 39

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150.0 °C 24

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PLASTIC/EPOXY 48

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RECTANGULAR 48

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FLANGE MOUNT 39 SMALL OUTLINE 9

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Active 64 Contact Manufacturer 8 Obsolete 13 Transferred 5

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260 6 NOT SPECIFIED 18

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Polarity/Channel Type (1)

PNP 51

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40 W 4

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10 W 3 40 W 20

Min (W) - Max (W)

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Surface Mount (2)

NO 42 YES 9

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Transition Frequency-Nom (fT) (1)

15 MHz 48

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