Parametric results for: 2SK3479-S under Power Field-Effect Transistors

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Manufacturer Part Number: 2sk3479s
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2SK3479-S-AZ
Renesas Electronics Corporation
Check for Price Yes Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 83 A 13 mΩ 422 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 332 A SWITCHING SILICON TO-262AA R-PSIP-T3 Not Qualified NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE RENESAS ELECTRONICS CORP MP-25 IN-LINE, R-PSIP-T3 3 PRSS0004AJ compliant EAR99 Renesas Electronics
2SK3479-S
NEC Electronics Group
Check for Price No Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 83 A 13 mΩ 422 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 332 A SWITCHING SILICON TO-262AA R-PSIP-T3 e0 Not Qualified DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE TIN LEAD THROUGH-HOLE SINGLE NEC ELECTRONICS CORP TO-262AA MP-25 FIN CUT, 3 PIN 3 compliant EAR99
2SK3479-S-AZ
NEC Electronics Group
Check for Price Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 83 A 13 mΩ 422 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 332 A SWITCHING SILICON TO-262AA R-PSIP-T3 Not Qualified NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE NEC ELECTRONICS CORP TO-262AA IN-LINE, R-PSIP-T3 3 unknown EAR99
2SK3479-S
Renesas Electronics Corporation
Check for Price Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 83 A 13 mΩ 422 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 332 A SWITCHING SILICON TO-262AA R-PSIP-T3 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE RENESAS ELECTRONICS CORP TO-262AA IN-LINE, R-PSIP-T3 3 unknown EAR99