Parametric results for: 2SK2925(L) under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 2

6 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 2

6 hits Apply

DS Breakdown Voltage-Min (1)

60 V 2

6 hits Apply

Drain Current-Max (ID) (1)

10 A 4

6 hits Apply

Drain-source On Resistance-Max (1)

160 mΩ 4

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

6 hits Apply

70 pF 1

6 hits Apply

R-PSIP-T3 4

6 hits Apply

e0 2 e6 1

6 hits Apply

Manufacturer (2)

Hitachi Ltd 2 Renesas Electronics Corporation 4

6 hits Apply

1 1

6 hits Apply

Number of Elements (1)

1 4

6 hits Apply

Number of Terminals (1)

3 4

6 hits Apply

ENHANCEMENT MODE 4

6 hits Apply

150.0 °C 3

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

IN-LINE 4

6 hits Apply

Active 1 Not Recommended 2 Obsolete 1 Transferred 2

6 hits Apply

No 1 Yes 1

6 hits Apply

NOT SPECIFIED 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

6 hits Apply

20 W 3

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply