Parametric results for: 2SK2553(L) under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

60 V 4

5 hits Apply

Drain Current-Max (Abs) (ID) (1)

50 A 1

5 hits Apply

Drain Current-Max (ID) (1)

50 A 4

5 hits Apply

Drain-source On Resistance-Max (1)

16 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

R-PSIP-T3 5

5 hits Apply

e0 1 e6 1

5 hits Apply

Manufacturer (2)

Hitachi Ltd 2 Renesas Electronics Corporation 3

5 hits Apply

1 1

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

3 5

5 hits Apply

ENHANCEMENT MODE 4

5 hits Apply

150.0 °C 4

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

IN-LINE 5

5 hits Apply

Active 1 Not Recommended 2 Transferred 2

5 hits Apply

No 1 Yes 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

5 hits Apply

75 W 4

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply