Parametric results for: 2SJ506(L) under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 2

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

4 hits Apply

Drain Current-Max (ID) (1)

10 A 2

4 hits Apply

Drain-source On Resistance-Max (1)

180 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

4 hits Apply

140 pF 1

4 hits Apply

R-PSIP-T3 4

4 hits Apply

e0 2 e6 1

4 hits Apply

Manufacturer (2)

Hitachi Ltd 1 Renesas Electronics Corporation 3

4 hits Apply

1 1

4 hits Apply

Number of Elements (1)

1 2

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 2

4 hits Apply

150.0 °C 1

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

IN-LINE 4

4 hits Apply

Not Recommended 2 Transferred 2

4 hits Apply

No 1 Yes 1

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 2

4 hits Apply

20 W 1

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply