Parametric results for: 1N60L-TF3-T under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

50.0 mJ 1

1 hit Apply

ISOLATED 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

600 V 1

1 hit Apply

Drain Current-Max (ID) (1)

1.2 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

11.5 Ω 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

4 pF 1

1 hit Apply

TO-220AB 1

1 hit Apply

R-PSFM-T3 1

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Manufacturer (1)

Unisonic Technologies Co Ltd 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

3 1

1 hit Apply

ENHANCEMENT MODE 1

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150.0 °C 1

1 hit Apply

-55.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Active 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

21 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply