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Memory IC Type: GDDR1 DRAM
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K4D26323QG-GC25
 Samsung Semiconductor 		Check for Price No Obsolete 134.2177 Mbit 32 4MX32 1.8 V 450 ps 400 MHz 4096 GDDR1 DRAM COMMON 2,4,8 4000000 4.1943 M 3-STATE 2,4,8 53 mA 490 µA CMOS COMMERCIAL S-PBGA-B144 Not Qualified e0 65 °C 144 PLASTIC/EPOXY FBGA BGA144,12X12,32 SQUARE GRID ARRAY, FINE PITCH YES Tin/Lead (Sn/Pb) BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC FBGA, BGA144,12X12,32 unknown EAR99 8542.32.00.02
K4D551638F-LC360
 Samsung Semiconductor 		Check for Price Yes Obsolete 268.4355 Mbit 16 16MX16 2.8 V 600 ps 166 MHz 8192 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS 3-STATE YES 2,4,8 350 µA 2.9 V 2.7 V CMOS COMMERCIAL R-PDSO-G66 Not Qualified e6 3 65 °C 66 PLASTIC/EPOXY TSSOP TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES TIN BISMUTH GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSSOP, TSSOP66,.46 compliant EAR99 8542.32.00.24 TSOP2 66
K4D263238E-GC22
 Samsung Semiconductor 		Check for Price No Obsolete 134.2177 Mbit 32 4MX32 2.8 V 550 ps 450 MHz 4096 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE YES 2,4,8,FP 120 mA 1.29 mA 2.94 V 2.66 V CMOS COMMERCIAL S-PBGA-B144 Not Qualified e0 65 °C 144 PLASTIC/EPOXY LFBGA BGA144,12X12,32 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN LEAD BALL 800 µm BOTTOM 1.4 mm 12 mm 12 mm SAMSUNG SEMICONDUCTOR INC FBGA-144 compliant EAR99 8542.32.00.02
K4D55323QF-VC36
 Samsung Semiconductor 		Check for Price Yes Obsolete 268.4355 Mbit 32 8MX32 1.8 V 600 ps 275 MHz 4096 GDDR1 DRAM COMMON 8000000 8.3886 M 3-STATE 4 CMOS COMMERCIAL S-PBGA-B144 Not Qualified 3 65 °C 260 144 PLASTIC/EPOXY FBGA BGA144,12X12,32 SQUARE GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC FBGA, BGA144,12X12,32 compliant EAR99 8542.32.00.24
K4D261638K-LC40
 Samsung Semiconductor 		Check for Price Yes Obsolete 134.2177 Mbit 16 8MX16 2.5 V 600 ps 250 MHz 4096 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 2,4,8 45 mA 350 µA 2.625 V 2.375 V CMOS COMMERCIAL R-PDSO-G66 Not Qualified 3 65 °C 260 66 PLASTIC/EPOXY TSOP2 TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 unknown EAR99 8542.32.00.02
K4D261638F-LC5AT
 Samsung Semiconductor 		Check for Price Yes Obsolete 134.2177 Mbit 16 8MX16 2.5 V 700 ps 200 MHz 4096 GDDR1 DRAM COMMON 2,4,8 8000000 8.3886 M 3-STATE 2,4,8 CMOS COMMERCIAL R-PDSO-G66 Not Qualified e3 1 65 °C 66 PLASTIC/EPOXY TSSOP TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES MATTE TIN GULL WING 635 µm DUAL SAMSUNG SEMICONDUCTOR INC TSSOP, TSSOP66,.46 compliant EAR99 8542.32.00.02
K4D26323QG-VC2A0
 Samsung Semiconductor 		Check for Price Yes Obsolete 134.2177 Mbit 32 4MX32 1.8 V 550 ps 350 MHz 4096 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE YES 2,4,8 10 mA 440 µA 1.9 V 1.7 V CMOS COMMERCIAL S-PBGA-B144 Not Qualified e1 3 65 °C 144 PLASTIC/EPOXY LFBGA BGA144,12X12,32 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.4 mm 12 mm 12 mm SAMSUNG SEMICONDUCTOR INC LFBGA, BGA144,12X12,32 compliant EAR99 8542.32.00.02 BGA 144
K4D261638I-LC40T
 Samsung Semiconductor 		Check for Price Yes Yes Obsolete 134.2177 Mbit 16 8MX16 2.5 V 600 ps 250 MHz 4096 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 2,4,8 345 mA 390 µA 2.625 V 2.375 V CMOS COMMERCIAL R-PDSO-G66 Not Qualified e3 1 65 °C 66 PLASTIC/EPOXY TSSOP TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES MATTE TIN GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSSOP, TSSOP66,.46 compliant EAR99 8542.32.00.02
K4D551638F-LC40T
 Samsung Semiconductor 		Check for Price Yes Yes Obsolete 268.4355 Mbit 16 16MX16 2.6 V 250 MHz 8192 GDDR1 DRAM COMMON 2,4,8 16000000 16.7772 M 3-STATE 2,4,8 410 µA CMOS COMMERCIAL R-PDSO-G66 Not Qualified e3 1 65 °C 66 PLASTIC/EPOXY TSSOP TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES MATTE TIN GULL WING 635 µm DUAL SAMSUNG SEMICONDUCTOR INC TSSOP, TSSOP66,.46 compliant EAR99 8542.32.00.24
K4D553238F-VC360
 Samsung Semiconductor 		Check for Price Yes Obsolete 268.4355 Mbit 32 8MX32 2.5 V 600 ps FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 2.625 V 2.375 V CMOS COMMERCIAL S-PBGA-B144 Not Qualified e1 3 65 °C 144 PLASTIC/EPOXY LFBGA SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.4 mm 12 mm 12 mm SAMSUNG SEMICONDUCTOR INC LFBGA, compliant EAR99 8542.32.00.24 BGA 144
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