Filter Your Search
41 - 50 of 52,389 results
Select Parts | Part Number |
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BSS123Q-7
Diodes Incorporated
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2N7002KT1G
onsemi
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WM02P06H
Cyg Wayon Circuit Protection Co Ltd
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2N7002PW
Diotec Semiconductor AG
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2N7002-7-F
Diodes Incorporated
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YJL2301D
Yangzhou Yangjie Electronics Co Ltd
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BSS138-7-F
Diodes Incorporated
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DMG6968U-7
Diodes Incorporated
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DMN26D0UFB4-7
Diodes Incorporated
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DMN601K-7
Diodes Incorporated
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Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||||||||||||||||||||
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Pbfree Code
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Rohs Code
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DS Breakdown Voltage-Min
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Drain Current-Max (ID)
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JESD-30 Code
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JESD-609 Code
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Ihs Manufacturer
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Samacsys Manufacturer
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Date Of Intro
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Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 170 mA | 10 Ω | 6 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | AEC-Q101; IATF 16949; MIL-STD-202 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | SOT-23, 3 PIN | compliant | EAR99 | Diodes Incorporated | ||||||||||||
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 320 mA | 1.6 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 420 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | ONSEMI | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | compliant | EAR99 | onsemi | SOT-23 (TO-236) 3 LEAD | 3 | 318 | |||||||||
Yes | Contact Manufacturer | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 660 mA | 520 mΩ | 9 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 mW | SILICON | R-PDSO-F3 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | WAYON ELECTRONICS CO LTD | SOT-723, 3 PIN | unknown | |||||||||||||||||||||||
Yes | Active | e3 | 1 | Matte Tin (Sn) - annealed | DIOTEC SEMICONDUCTOR AG | compliant | EAR99 | Diotec | |||||||||||||||||||||||||||||||||||||||
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 13.5 Ω | HIGH RELIABILITY, LOW THRESHOLD | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | compliant | EAR99 | Diodes Incorporated | 3 | ||||||||||||
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 19 V | 1 | 3.8 A | 47 mΩ | 103 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | 1 W | SWITCHING | SILICON | R-PDSO-G3 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | YANGZHOU YANGJIE ELECTRONICS CO LTD | , | compliant | EAR99 | Yangzhou Yangjie Electronic Technology Co., Ltd. | 8541.29.00.95 | 2020-09-24 | ||||||||||||||||
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 200 mA | 3.5 Ω | HIGH RELIABILITY, LOW THRESHOLD | 8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | compliant | EAR99 | Diodes Incorporated | 3 | ||||||||||||
Yes | Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 6.5 A | 25 mΩ | 32 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.3 W | 30 A | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | MIL-STD-202 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | SOT-23, 3 PIN | compliant | EAR99 | Diodes Incorporated | 3 | |||||||||
Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 240 mA | 3 Ω | ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SWITCHING | SILICON | R-PBCC-N3 | e4 | Not Qualified | AEC-Q101 | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | NICKEL PALLADIUM GOLD | NO LEAD | BOTTOM | DIODES INC | compliant | EAR99 | Diodes Incorporated | DFN | 3 | CASE DFN1006H4-3 | |||||||||
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 300 mA | 2 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -65 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | SOT-23, 3 PIN | compliant | EAR99 | Diodes Incorporated | 3 |
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BSS123Q-7
Diodes Incorporated
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$0.0348 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 170 mA | 10 Ω | 6 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | AEC-Q101; IATF 16949; MIL-STD-202 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | SOT-23, 3 PIN | compliant | EAR99 | Diodes Incorporated | |||||||||||||
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2N7002KT1G
onsemi
|
$0.0349 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 320 mA | 1.6 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 420 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | ONSEMI | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | compliant | EAR99 | onsemi | SOT-23 (TO-236) 3 LEAD | 3 | 318 | ||||||||||
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WM02P06H
Cyg Wayon Circuit Protection Co Ltd
|
$0.0349 | Yes | Contact Manufacturer | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 660 mA | 520 mΩ | 9 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 mW | SILICON | R-PDSO-F3 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | WAYON ELECTRONICS CO LTD | SOT-723, 3 PIN | unknown | ||||||||||||||||||||||||
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2N7002PW
Diotec Semiconductor AG
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$0.0352 | Yes | Active | e3 | 1 | Matte Tin (Sn) - annealed | DIOTEC SEMICONDUCTOR AG | compliant | EAR99 | Diotec | ||||||||||||||||||||||||||||||||||||||||
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2N7002-7-F
Diodes Incorporated
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$0.0352 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 13.5 Ω | HIGH RELIABILITY, LOW THRESHOLD | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | compliant | EAR99 | Diodes Incorporated | 3 | |||||||||||||
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YJL2301D
Yangzhou Yangjie Electronics Co Ltd
|
$0.0363 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 19 V | 1 | 3.8 A | 47 mΩ | 103 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | 1 W | SWITCHING | SILICON | R-PDSO-G3 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | YANGZHOU YANGJIE ELECTRONICS CO LTD | , | compliant | EAR99 | Yangzhou Yangjie Electronic Technology Co., Ltd. | 8541.29.00.95 | 2020-09-24 | |||||||||||||||||
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BSS138-7-F
Diodes Incorporated
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$0.0364 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 200 mA | 3.5 Ω | HIGH RELIABILITY, LOW THRESHOLD | 8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | compliant | EAR99 | Diodes Incorporated | 3 | |||||||||||||
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DMG6968U-7
Diodes Incorporated
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$0.0365 | Yes | Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 6.5 A | 25 mΩ | 32 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.3 W | 30 A | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | MIL-STD-202 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | SOT-23, 3 PIN | compliant | EAR99 | Diodes Incorporated | 3 | ||||||||||
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DMN26D0UFB4-7
Diodes Incorporated
|
$0.0372 | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 240 mA | 3 Ω | ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SWITCHING | SILICON | R-PBCC-N3 | e4 | Not Qualified | AEC-Q101 | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | NICKEL PALLADIUM GOLD | NO LEAD | BOTTOM | DIODES INC | compliant | EAR99 | Diodes Incorporated | DFN | 3 | CASE DFN1006H4-3 | ||||||||||
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DMN601K-7
Diodes Incorporated
|
$0.0372 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 300 mA | 2 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -65 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | SOT-23, 3 PIN | compliant | EAR99 | Diodes Incorporated | 3 |