Parametric results for: BC807-25W-AU_R1_000A1 under Small Signal Field-Effect Transistors

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2N7002PW
Diotec Semiconductor AG
$0.0370 Yes Active e3 1 Matte Tin (Sn) - annealed DIOTEC SEMICONDUCTOR AG compliant EAR99 Diotec
BSS138-7-F
Diodes Incorporated
$0.0379 Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 200 mA 3.5 Ω HIGH RELIABILITY, LOW THRESHOLD 8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant EAR99 Diodes Incorporated 3
2N7002P,215
Nexperia
$0.0383 Yes Not Recommended N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 360 mA 1.6 Ω LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 AEC-Q101; IEC-60134 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NEXPERIA compliant EAR99 Nexperia 3 TO-236 SOT23
SI1062X-T1-GE3
Vishay Intertechnologies
$0.0384 Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 530 mA 420 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 220 mW 220 mW SWITCHING SILICON R-PDSO-F3 e3 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN FLAT DUAL VISHAY INTERTECHNOLOGY INC compliant EAR99 Vishay SC-89, 3 PIN 8541.21.00.95
SSM3K7002CFU,LF(T
Toshiba America Electronic Components
$0.0384 Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE AND RESISTOR 3 60 V 1 170 mA 4.7 Ω 0.7 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 700 mW SWITCHING SILICON R-PDSO-G3 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL TOSHIBA CORP unknown EAR99 Toshiba
BSD235NH6327XTSA1
Infineon Technologies AG
$0.0386 Yes Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 20 V 2 950 mA 350 mΩ AVALANCHE RATED METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SILICON R-PDSO-G6 e3 AEC-Q101 1 NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG compliant EAR99 Infineon SMALL OUTLINE, R-PDSO-G6
DMN63D8LDWQ-7
Diodes Incorporated
$0.0389 Yes Yes Not Recommended N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 30 V 2 220 mA 4.5 Ω 2 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON R-PDSO-G6 e3 AEC-Q101; IATF 16949; MIL-STD-202 1 150 °C -55 °C 260 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL DIODES INC compliant EAR99 Diodes Incorporated
YJL2305B
Yangzhou Yangjie Electronics Co Ltd
$0.0391 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 5.4 A 39 mΩ 109 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.2 W 1.2 W 22 A SWITCHING SILICON R-PDSO-G3 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL YANGZHOU YANGJIE ELECTRONICS CO LTD compliant EAR99 , 8541.29.00.95 2020-09-24
2N7002LT3G
onsemi
$0.0397 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI compliant EAR99 onsemi 3 SOT-23 (TO-236) 3 LEAD 318
MMFTN138
Diotec Semiconductor AG
$0.0397 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 220 mA 6 Ω 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 360 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C 260 10 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIOTEC SEMICONDUCTOR AG compliant EAR99 Diotec 3 SOT-23 ROHS COMPLIANT, PLASTIC PACKAGE-3