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31 - 40 of 52,389 results
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MMBT7002KW-AQ
Diotec Semiconductor AG
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$0.0299 | Yes | Active | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | Matte Tin (Sn) - annealed | DIOTEC SEMICONDUCTOR AG | compliant | EAR99 | Diotec | 2024-05-18 03:38:52 | 10 | 8.8 | 88 | RoHS 2 (2015/863/EU) | 2024-06-27 | 100 | YES | 1333-86-4, 1309-64-4 | DRC Conflict Free | CMRT V6.40 | [object Object],[object Object] | ||||||||||||||||||||||||||||||||||||||||||
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YJL2300A
Yangzhou Yangjie Electronics Co Ltd
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$0.0301 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 4.5 A | 25 mΩ | 70 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | 1 W | SWITCHING | SILICON | R-PDSO-G3 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | YANGZHOU YANGJIE ELECTRONICS CO LTD | compliant | 8.8 | RoHS 2 (2015/863/EU) | 2020-06-25 | DRC Conflict Free | CMRT V6.01 | , | 2020-09-24 | Military: -55C to +150C | [object Object],[object Object],[object ... more | |||||||||||||||||||||||||||||
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BSS84,215
Nexperia
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$0.0306 | Yes | Not Recommended | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 130 mA | 10 Ω | LOGIC LEVEL COMPATIBLE | 12 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | IEC-60134 | 1 | 150 °C | -65 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | NEXPERIA | compliant | EAR99 | Nexperia | 2023-03-07 16:10:32 | 7.56386 | 8.8 | 66.56196800000001 | RoHS 2 (2015/863/EU) | 2024-06-27 | 94 | YES | 7440-48-4, 7440-02-0, 1333-86-4, 7439-92-1 | DRC Conflict Free | CMRT V6.40 | [object Object],[object Object],[object Object] | PLASTIC PACKAGE-3 | Military: -65C to +150C | [object Object],[object Object],[object ... more | TO-236 | 3 | SOT23 | MOSFET P-Channel 50V 0.13A TO236AB NXP B... more | e | [object Object],[object Object] | ||||||||
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MMFTP84K-AQ
Diotec Semiconductor AG
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$0.0307 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 180 mA | 10 Ω | 6 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | AEC-Q101 | 1 | 150 °C | 260 | 10 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIOTEC SEMICONDUCTOR AG | not_compliant | EAR99 | Diotec | 2024-06-27 08:28:35 | 10 | 8.8 | 88 | RoHS 2 (2015/863/EU) | 2024-06-27 | 100 | YES | 79-94-7, 1333-86-4, 1309-64-4 | DRC Conflict Free | CMRT V6.40 | [object Object],[object Object] | SOT-23, 3 PIN | 79-94-7 | AEC-Q101 | ||||||||||||||||
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NX138AKVL
Nexperia
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$0.0310 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 190 mA | 4.5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | IEC-60134 | 1 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | NEXPERIA | compliant | EAR99 | Nexperia | 2022-06-22 21:39:32 | 7.4867 | 8.8 | 65.88296000000001 | RoHS 2 (2015/863/EU) | 2024-01-23 | 98 | YES | 7440-48-4, 7440-02-0, 1333-86-4, 7439-92-1 | DRC Conflict Free | CMRT V6.40 | [object Object],[object Object] | [object Object],[object Object],[object ... more | TO-236 | 3 | SOT23 | e | [object Object],[object Object] | ||||||||||||||||
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DMN67D8LW-7
Diodes Incorporated
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$0.0327 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 240 mA | 5 Ω | 2.5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 470 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | compliant | EAR99 | Diodes Incorporated | 2024-03-18 13:06:02 | 6.23 | 8.8 | 54.824000000000005 | RoHS 2 (2015/863/EU) | 2024-06-27 | 98 | YES | 7440-48-4, 7440-02-0, 1333-86-4 | DRC Conflict Free | CMRT V6.40 | [object Object],[object Object],[object Object] | SOT-323, 3 PIN | Military: -55C to +150C | [object Object],[object Object],[object ... more | e | [object Object],[object Object],[object Object],[object Object] | ||||||||||||||
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SSM3K15AFU,LF(T
Toshiba America Electronic Components
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$0.0328 | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 3 | 30 V | 1 | 100 mA | 6 Ω | 6.5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 mW | SWITCHING | SILICON | R-PDSO-G3 | 1 | 150 °C | 260 | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | TOSHIBA CORP | unknown | EAR99 | Toshiba | 2023-03-07 16:10:32 | 8.8 | RoHS 2 (2015/863/EU) | 2023-06-14 | DRC Conflict Free Undeterminable | Conflict Minerals Statement | [object Object],[object Object] | , | [object Object],[object Object],[object ... more | N-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount USM | ||||||||||||||||||||||||||
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RU1L002SNTL
ROHM Semiconductor
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$0.0333 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 250 mA | 3.2 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-F3 | 1 | 260 | 10 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | ROHM CO LTD | compliant | EAR99 | ROHM Semiconductor | 2023-03-07 16:10:32 | 8.8 | RoHS 2 (2015/863/EU) | 2023-06-14 | DRC Conflict Free | CMRT V6.10 | [object Object],[object Object] | UMT3F, 3 PIN | [object Object],[object Object],[object ... more | MOSFET N-Channel MOSFET, 2.5V. MOSFETs a... more | ||||||||||||||||||||||||||||
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BSS123L
onsemi
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$0.0334 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 170 mA | 10 Ω | 1.67 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 360 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | ONSEMI | compliant | EAR99 | onsemi | 2024-09-19 14:45:22 | 8.02 | 8.8 | 70.57600000000001 | RoHS 2 (2015/863/EU) | 2024-01-23 | 94 | YES | 1333-86-4, 7440-02-0 | DRC Conflict Free | CMRT V6.31 | [object Object],[object Object] | SOT-23, 3 PIN | Military: -55C to +150C | [object Object],[object Object],[object ... more | SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | 318 | ON SEMICONDUCTOR - BSS123L - MOSFET, N-CHANNEL, 100V, 0.17A, SOT-23-3 | e | [object Object],[object Object] | |||||||||||
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DMN62D0UW-7
Diodes Incorporated
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$0.0335 | Yes | Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 340 mA | 2 Ω | 2.4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 470 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | MIL-STD-202 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | compliant | EAR99 | Diodes Incorporated | 2024-06-25 08:08:00 | 8.8 | RoHS 2 (2015/863/EU) | 2024-06-27 | DRC Conflict Free | CMRT V6.40 | [object Object],[object Object],[object Object] | SOT-323, 3 PIN | Military: -55C to +150C | [object Object],[object Object],[object ... more | MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A | e |