Parametric results for: cfy6708p under RF Small Signal Field-Effect Transistors

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MMBF5484
onsemi
$0.1026 Yes Active N-CHANNEL YES SINGLE 3 1 1 pF JUNCTION DEPLETION MODE 225 mW 225 mW AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ONSEMI SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P 318 compliant EAR99 8541.21.00.95 onsemi
MMBFJ309LT1G
onsemi
$0.1235 Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI SOT-23 (TO-236) 3 LEAD 318 compliant EAR99 onsemi HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 3
MMBFJ310LT1G
onsemi
$0.1250 Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI SOT-23 (TO-236) 3 LEAD 318 compliant EAR99 onsemi HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 3
BF2040E6814HTSA1
Infineon Technologies AG
$0.1580 Yes Obsolete N-CHANNEL YES SINGLE 4 10 V ULTRA HIGH FREQUENCY BAND 1 20 dB 40 mA LOW NOISE METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE AMPLIFIER SILICON R-PDSO-G4 e3 1 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG compliant EAR99 Infineon SOT-143, 4 PIN
BF256B
onsemi
$0.1790 Yes Active N-CHANNEL NO SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 JUNCTION DEPLETION MODE 350 mW AMPLIFIER SILICON TO-92 O-PBCY-T3 e3 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM ONSEMI TO-92-3 135AN compliant EAR99 onsemi
MMBFJ310LT3G
onsemi
$0.1895 Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI SOT-23 (TO-236) 3 LEAD 318 compliant EAR99 onsemi 3
MMBFU310LT1G
onsemi
$0.1990 Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI SOT-23 (TO-236) 3 LEAD 318 compliant EAR99 onsemi CASE 318-08, 3 PIN 3
BF998E6327HTSA1
Infineon Technologies AG
$0.2095 Yes Yes Obsolete N-CHANNEL YES SINGLE 4 12 V ULTRA HIGH FREQUENCY BAND 1 30 mA LOW NOISE METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE SILICON R-PDSO-G4 e3 Not Qualified 1 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG SOT-143 compliant EAR99 Infineon SMALL OUTLINE, R-PDSO-G4 4 1996-04-01
SMMBFJ310LT1G
onsemi
$0.2364 Yes Active N-CHANNEL YES JUNCTION 225 mW e3 1 150 °C 260 30 Matte Tin (Sn) - annealed ONSEMI SOT-23 (TO-236) 3 LEAD 318 compliant EAR99 onsemi 3
ATF-38143-BLKG
Broadcom Limited
$0.4478 Yes Obsolete N-CHANNEL YES SINGLE 4 4.5 V X BAND 1 15 dB HIGH ELECTRON MOBILITY DEPLETION MODE 580 mW AMPLIFIER GALLIUM ARSENIDE R-PDSO-G4 e3 Not Qualified 1 160 °C 260 20 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BROADCOM LTD compliant EAR99 8541.21.00.75 SMALL OUTLINE, R-PDSO-G4