Parametric results for: bf2040 under RF Small Signal Field-Effect Transistors

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CPH6904-TL-E
onsemi
$0.4794 Yes Active N-CHANNEL YES JUNCTION 700 mW e6 1 150 °C 260 30 TIN BISMUTH ONSEMI CPH6 6 318BD compliant EAR99 onsemi
SST4416-E3
Vishay Intertechnologies
$0.5488 Yes Yes Obsolete N-CHANNEL YES SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 10 dB LOW NOISE JUNCTION DEPLETION MODE 360 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 135 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL VISHAY INTERTECHNOLOGY INC SOT-23 3 unknown EAR99 Vishay TO-236, 3 PIN
ATF-35143-BLKG
Broadcom Limited
$0.6270 Yes Obsolete N-CHANNEL YES SINGLE 4 5.5 V L BAND 1 16.5 dB LOW NOISE HIGH ELECTRON MOBILITY ENHANCEMENT MODE 300 mW AMPLIFIER SILICON R-PDSO-G4 e3 Not Qualified 1 160 °C 260 20 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BROADCOM INC compliant EAR99 Avago Technologies SMALL OUTLINE, R-PDSO-G4 8541.21.00.75
NTE132
NTE Electronics Inc
$1.7133 Active N-CHANNEL NO SINGLE 3 VERY HIGH FREQUENCY BAND 1 1.2 pF JUNCTION DEPLETION MODE 310 mW AMPLIFIER SILICON TO-106 O-PBCY-W3 Not Qualified PLASTIC/EPOXY ROUND CYLINDRICAL WIRE BOTTOM NTE ELECTRONICS INC unknown EAR99
ATF-53189-BLK
Broadcom Limited
$2.0858 Yes Obsolete N-CHANNEL YES SINGLE 3 7 V C BAND 1 14 dB 300 mA LOW NOISE HIGH ELECTRON MOBILITY ENHANCEMENT MODE 1 W AMPLIFIER SILICON R-PSSO-F3 e3 Not Qualified 2 150 °C 260 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN FLAT SINGLE BROADCOM LTD compliant EAR99 Avago Technologies SMALL OUTLINE, R-PSSO-F3 8541.29.00.75
ATF-501P8-BLK
Broadcom Limited
$3.0595 Yes Obsolete N-CHANNEL YES SINGLE 8 7 V L BAND 1 13.5 dB 1 A LOW NOISE HIGH ELECTRON MOBILITY ENHANCEMENT MODE 3.5 W AMPLIFIER SILICON MO-229 S-PDSO-N8 e3 Not Qualified 1 150 °C 260 SOURCE PLASTIC/EPOXY SQUARE SMALL OUTLINE MATTE TIN NO LEAD DUAL BROADCOM INC compliant EAR99 Avago Technologies SMALL OUTLINE, S-PDSO-N8 8541.29.00.75
NTE452
NTE Electronics Inc
$5.1564 Yes Active N-CHANNEL NO SINGLE 4 30 V VERY HIGH FREQUENCY BAND 1 10 dB 0.8 pF JUNCTION DEPLETION MODE 300 mW AMPLIFIER SILICON TO-72 O-MBCY-W4 Not Qualified NOT SPECIFIED NOT SPECIFIED METAL ROUND CYLINDRICAL WIRE BOTTOM NTE ELECTRONICS INC unknown EAR99 CYLINDRICAL, O-MBCY-W4
NTE221
NTE Electronics Inc
$6.4720 Yes Active N-CHANNEL NO SINGLE 4 20 V VERY HIGH FREQUENCY BAND 1 0.03 pF METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE 400 mW AMPLIFIER SILICON TO-72 O-MBCY-W4 Not Qualified NOT SPECIFIED NOT SPECIFIED SOURCE METAL ROUND CYLINDRICAL WIRE BOTTOM NTE ELECTRONICS INC unknown EAR99 CYLINDRICAL, O-MBCY-W4
NTE222
NTE Electronics Inc
$7.8768 Yes Active N-CHANNEL NO SINGLE 4 25 V VERY HIGH FREQUENCY BAND 1 14 dB 50 mA 0.03 pF METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE 330 mW AMPLIFIER SILICON TO-72 O-MBCY-W4 Not Qualified NOT SPECIFIED NOT SPECIFIED SOURCE METAL ROUND CYLINDRICAL WIRE BOTTOM NTE ELECTRONICS INC unknown EAR99 NTE ELECTRONICS
2N3821
Microchip Technology Inc
$29.1296 No Active N-CHANNEL NO SINGLE 4 50 V VERY HIGH FREQUENCY BAND 1 3 pF METAL-OXIDE SEMICONDUCTOR DEPLETION MODE 300 mW SILICON TO-72 O-MBCY-W4 e0 Not Qualified 200 °C METAL ROUND CYLINDRICAL TIN LEAD WIRE BOTTOM MICROCHIP TECHNOLOGY INC compliant EAR99 Microchip TO-206AF, 4 PIN