Parametric results for: 3050+RD001 under RF Small Signal Field-Effect Transistors

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2N3823
Microchip Technology Inc
$43.4822 No Active N-CHANNEL NO SINGLE 4 30 V VERY HIGH FREQUENCY BAND 1 2 pF JUNCTION DEPLETION MODE SILICON TO-206AF O-MBCY-W4 e0 Not Qualified 200 °C METAL ROUND CYLINDRICAL TIN LEAD WIRE BOTTOM MICROCHIP TECHNOLOGY INC TO-72, 4 PIN compliant EAR99
2N3823UB
Microchip Technology Inc
$67.2847 No Active N-CHANNEL YES SINGLE 3 30 V VERY HIGH FREQUENCY BAND 1 2 pF JUNCTION DEPLETION MODE 300 mW SILICON R-CDSO-N3 Not Qualified 200 °C CERAMIC, METAL-SEALED COFIRED RECTANGULAR SMALL OUTLINE NO LEAD DUAL MICROCHIP TECHNOLOGY INC CERAMIC PACKAGE-3 compliant EAR99
CLF1G0060-10U
Ampleon
$93.6195 Contact Manufacturer N-CHANNEL YES SINGLE 2 150 V C BAND 1 HIGH ELECTRON MOBILITY DEPLETION MODE AMPLIFIER GALLIUM NITRIDE R-CDFM-F2 IEC-60134 SOURCE CERAMIC, METAL-SEALED COFIRED RECTANGULAR FLANGE MOUNT FLAT DUAL AMPLEON NETHERLANDS B V FLANGE MOUNT, R-CDFM-F2 unknown EAR99 Ampleon USA Inc.
MRFE6VP6600NR3
NXP Semiconductors
$95.0650 Yes Not Recommended e3 3 260 40 Tin (Sn) NXP SEMICONDUCTORS compliant EAR99 NXP 8541.29.00
MRF8VP13350GNR3
NXP Semiconductors
$172.9200 Yes End Of Life N-CHANNEL YES SEPARATE, 2 ELEMENTS 4 100 V L BAND 2 17.5 dB METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE AMPLIFIER SILICON R-PDSO-G4 e3 3 225 °C -40 °C 260 40 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL NXP SEMICONDUCTORS , compliant EAR99 NXP 8541.29.00
MRF8VP13350NR3
NXP Semiconductors
$201.4250 Yes End Of Life N-CHANNEL YES SEPARATE, 2 ELEMENTS 4 100 V L BAND 2 17.5 dB METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE AMPLIFIER SILICON R-PDFP-F4 e3 3 225 °C -40 °C 260 40 SOURCE PLASTIC/EPOXY RECTANGULAR FLATPACK Tin (Sn) FLAT DUAL NXP SEMICONDUCTORS , compliant EAR99 NXP 8541.29.00
1214GN-180LV
Microchip Technology Inc
$621.1245 Yes Active N-CHANNEL 300 mW 250 °C MICROCHIP TECHNOLOGY INC compliant EAR99 8541.21.00.95
AFV121KHSR5
NXP Semiconductors
$658.2050 Yes Active N-CHANNEL YES COMMON SOURCE, 2 ELEMENTS 4 112 V L BAND 2 18.5 dB 2.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE AMPLIFIER SILICON R-CDFM-F4 225 °C -40 °C 260 40 SOURCE CERAMIC, METAL-SEALED COFIRED RECTANGULAR FLANGE MOUNT FLAT DUAL NXP SEMICONDUCTORS , compliant EAR99 8541.29.00
AFV121KGSR5
NXP Semiconductors
$659.4450 Yes Active N-CHANNEL YES COMMON SOURCE, 2 ELEMENTS 4 112 V L BAND 2 18.5 dB 2.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE AMPLIFIER SILICON R-CDFM-G4 225 °C -40 °C 260 40 SOURCE CERAMIC, METAL-SEALED COFIRED RECTANGULAR FLANGE MOUNT GULL WING DUAL NXP SEMICONDUCTORS , compliant EAR99 NXP 8541.29.00
3SK230-UAA
Renesas Electronics Corporation
Check for Price Obsolete RENESAS ELECTRONICS CORP , unknown EAR99