Parametric results for: bf998, under RF Small Signal Field-Effect Transistors

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BF908,215
NXP Semiconductors
$0.2915 Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 12 V ULTRA HIGH FREQUENCY BAND 1 40 mA LOW NOISE 45 pF METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE 200 mW AMPLIFIER SILICON R-PDSO-G4 e3 Not Qualified 150 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NXP SEMICONDUCTORS SOT-143 MICRO MINIATURE, PLASTIC PACKAGE-4 4 SOT143B compliant EAR99 8541.21.00.75
BF998WR,115
NXP Semiconductors
$0.2915 Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 12 V ULTRA HIGH FREQUENCY BAND 1 30 mA LOW NOISE METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE 300 mW AMPLIFIER SILICON R-PDSO-G4 e3 Not Qualified 150 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NXP SEMICONDUCTORS SOT PLASTIC, SOT-343R, 4 PIN 4 SOT343R compliant EAR99 8541.21.00.75 NXP
BF998R,215
NXP Semiconductors
$0.2915 Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 12 V ULTRA HIGH FREQUENCY BAND 1 30 mA LOW NOISE METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE 200 mW AMPLIFIER SILICON R-PDSO-G4 e3 Not Qualified 150 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NXP SEMICONDUCTORS SOT-143 MICRO MINIATURE, PLASTIC PACKAGE-4 4 SOT143R compliant EAR99 8541.21.00.75 NXP
3SK292(TE85R,F)
Toshiba America Electronic Components
$0.3046 Yes Obsolete N-CHANNEL YES SINGLE 4 12.5 V VERY HIGH FREQUENCY BAND 1 23.5 dB 30 mA 0.04 pF METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE AMPLIFIER SILICON R-PDSO-G4 NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL TOSHIBA CORP SMALL OUTLINE, R-PDSO-G4 unknown EAR99 Toshiba
SMMBFJ309LT1G
onsemi
$0.3236 Yes Active N-CHANNEL YES JUNCTION 225 mW e3 1 150 °C 260 30 SMALL OUTLINE Matte Tin (Sn) - annealed ONSEMI SOT-23 (TO-236) 3 LEAD 3 318-08 compliant EAR99 onsemi
PMBFJ308,215
NXP Semiconductors
$0.3255 Yes Obsolete N-CHANNEL YES SINGLE 3 25 V VERY HIGH FREQUENCY BAND 1 LOW NOISE 2.5 pF JUNCTION DEPLETION MODE 250 mW AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL NXP SEMICONDUCTORS TO-236 PLASTIC PACKAGE-3 3 SOT23 compliant EAR99 8541.21.00 NXP 1993-07-01
BF909,215
NXP Semiconductors
$0.3338 Yes Obsolete N-CHANNEL YES COMPLEX 4 7 V ULTRA HIGH FREQUENCY BAND 2 40 mA LOW NOISE 0.05 pF METAL-OXIDE SEMICONDUCTOR DUAL GATE, ENHANCEMENT MODE AMPLIFIER SILICON R-PDSO-G4 e3 Not Qualified 150 °C SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL NXP SEMICONDUCTORS SOT-143 MICRO MINIATURE, PLASTIC PACKAGE-4 4 SOT143B unknown EAR99 8541.21.00.75
BF992,215
NXP Semiconductors
$0.3361 Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 20 V VERY HIGH FREQUENCY BAND 1 40 mA 0.04 pF METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE 200 mW AMPLIFIER SILICON R-PDSO-G4 e3 Not Qualified 1 150 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL NXP SEMICONDUCTORS SOT-143 MICRO MINIATURE, PLASTIC, SMD, 4 PIN 4 SOT143B compliant EAR99 8541.21.00.75 NXP 1993-07-01
BF994S,215
NXP Semiconductors
$0.3892 Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 20 V VERY HIGH FREQUENCY BAND 1 30 mA METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE 200 mW AMPLIFIER SILICON R-PDSO-G4 e3 Not Qualified 1 150 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NXP SEMICONDUCTORS SOT-143 MICRO MINIATURE, PLASTIC, SMD, 4 PIN 4 SOT143B compliant EAR99 8541.21.00.75 NXP
BF513,215
NXP Semiconductors
$0.4156 Yes Obsolete N-CHANNEL YES SINGLE 3 20 V VERY HIGH FREQUENCY BAND 1 30 mA LOW NOISE 0.4 pF JUNCTION DEPLETION MODE 250 mW AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL NXP SEMICONDUCTORS TO-236 PLASTIC, SMD, SST3, 3 PIN 3 SOT23 compliant EAR99 8541.21.00 NXP 1993-07-01