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MMBFJ309LT1G
onsemi
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$0.0864 | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 25 V | ULTRA HIGH FREQUENCY BAND | 1 | 2.5 pF | JUNCTION | DEPLETION MODE | 225 mW | AMPLIFIER | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | ONSEMI | SOT-23 (TO-236) 3 LEAD | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318 | compliant | EAR99 | ON SEMICONDUCTOR - MMBFJ309LT1G - TRANSISTOR, JFET, N, 25V, SOT-23 | onsemi | 2024-09-19 14:45:22 | 8.02 | 8.9 | 71.378 | RoHS 2 (2015/863/EU) | 2024-01-23 | 100 | YES | 1333-86-4, 7440-02-0 | e | DRC Conflict Free | CMRT V6.31 | [object Object],[object Object] | [object Object],[object Object],[object ... more | |||||||||||||||||||
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MMBF5484
onsemi
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$0.1026 | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 1 | 1 pF | JUNCTION | DEPLETION MODE | 225 mW | 225 mW | AMPLIFIER | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | ONSEMI | SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | 318 | compliant | EAR99 | FAIRCHILD SEMICONDUCTOR - MMBF5484. - JFET, N CH, 25V, 0.01A, SOT23 | onsemi | 2024-09-19 14:45:22 | 8.706 | 8.9 | 77.4834 | RoHS 2 (2015/863/EU) | 2024-01-23 | 100 | YES | 1333-86-4, 7440-02-0 | e | DRC Conflict Free | CMRT V6.31 | [object Object],[object Object] | [object Object],[object Object],[object Object],[object Object],[object Object] | 8541.21.00.95 | Military: -55C to +150C | [object Object] | ||||||||||||||||||
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MMBFJ310LT1G
onsemi
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$0.1229 | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 25 V | ULTRA HIGH FREQUENCY BAND | 1 | 2.5 pF | JUNCTION | DEPLETION MODE | 225 mW | AMPLIFIER | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | ONSEMI | SOT-23 (TO-236) 3 LEAD | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318 | compliant | EAR99 | Transistor JFET N-Channel 25V SOT23 ON S... more | onsemi | 2024-09-19 14:45:22 | 8.02 | 8.9 | 71.378 | RoHS 2 (2015/863/EU) | 2024-01-23 | 100 | YES | 1333-86-4, 7440-02-0 | e | DRC Conflict Free | CMRT V6.31 | [object Object],[object Object] | [object Object],[object Object],[object ... more | [object Object],[object Object],[object ... more | ||||||||||||||||||
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BF2040E6814HTSA1
Infineon Technologies AG
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$0.1597 | Yes | Obsolete | N-CHANNEL | YES | SINGLE | 4 | 10 V | ULTRA HIGH FREQUENCY BAND | 1 | 20 dB | 40 mA | LOW NOISE | METAL-OXIDE SEMICONDUCTOR | DUAL GATE, DEPLETION MODE | AMPLIFIER | SILICON | R-PDSO-G4 | e3 | 1 | SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SOT-143, 4 PIN | compliant | EAR99 | Infineon | 2023-09-12 15:19:17 | 11.07 | 8.9 | 98.52300000000001 | RoHS 2 (2015/863/EU) | 2024-01-23 | 84 | YES | 1333-86-4, 1309-64-4, 7440-02-0 | DRC Conflict Free | CMRT V6.22 | [object Object],[object Object] | [object Object],[object Object],[object ... more | [object Object] | ||||||||||||||||||||||||||
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BF256B
onsemi
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$0.1790 | Yes | Active | N-CHANNEL | NO | SINGLE | 3 | ULTRA HIGH FREQUENCY BAND | 1 | JUNCTION | DEPLETION MODE | 350 mW | AMPLIFIER | SILICON | TO-92 | O-PBCY-T3 | e3 | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | ONSEMI | TO-92-3 | 135AN | compliant | EAR99 | Transistor, Fairchild, BF256B Fairchild ... more | onsemi | 2024-09-19 14:45:22 | 219.001 | 8.9 | 1949.1089000000002 | RoHS 2 (2015/863/EU) | 2024-01-23 | 95 | YES | 1333-86-4 | e | DRC Conflict Free | CMRT V6.31 | [object Object],[object Object] | [object Object],[object Object],[object ... more | 8.8 | 217.033 | 1909.893 | ||||||||||||||||||||||||
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MMBFU310LT1G
onsemi
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$0.2003 | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 25 V | ULTRA HIGH FREQUENCY BAND | 1 | 2.5 pF | JUNCTION | DEPLETION MODE | 225 mW | AMPLIFIER | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | ONSEMI | SOT-23 (TO-236) 3 LEAD | CASE 318-08, 3 PIN | 3 | 318 | compliant | EAR99 | ONSEMI - MMBFU310LT1G - JFET Transistor,... more | onsemi | 2024-09-19 14:45:22 | 8.02 | 8.9 | 71.378 | RoHS 2 (2015/863/EU) | 2024-01-23 | 100 | YES | 1333-86-4, 7440-02-0 | e | DRC Conflict Free | CMRT V6.31 | [object Object],[object Object] | [object Object],[object Object],[object ... more | |||||||||||||||||||
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BF998E6327HTSA1
Infineon Technologies AG
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$0.2095 | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE | 4 | 12 V | ULTRA HIGH FREQUENCY BAND | 1 | 30 mA | LOW NOISE | METAL-OXIDE SEMICONDUCTOR | DUAL GATE, DEPLETION MODE | SILICON | R-PDSO-G4 | e3 | Not Qualified | 1 | SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SOT-143 | SMALL OUTLINE, R-PDSO-G4 | 4 | compliant | EAR99 | RF MOSFET Transistors N-CH 12 V 30 mA | Infineon | 2023-03-07 16:10:32 | 11.07 | 8.9 | 98.52300000000001 | RoHS 2 (2015/863/EU) | 2024-01-23 | 84 | YES | 1333-86-4, 1309-64-4, 7440-02-0 | DRC Conflict Free | CMRT V6.22 | [object Object],[object Object] | [object Object],[object Object],[object ... more | [object Object] | 1996-04-01 | ||||||||||||||||||||||
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MMBFJ310LT3G
onsemi
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$0.2318 | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 25 V | ULTRA HIGH FREQUENCY BAND | 1 | 2.5 pF | JUNCTION | DEPLETION MODE | 225 mW | AMPLIFIER | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | ONSEMI | SOT-23 (TO-236) 3 LEAD | 3 | 318 | compliant | EAR99 | JFET - VHF/UHF Amplifier N-Ch 25V SOT23 ... more | onsemi | 2024-09-19 14:45:22 | 8.02 | 8.9 | 71.378 | RoHS 2 (2015/863/EU) | 2024-01-23 | 100 | YES | 1333-86-4, 7440-02-0 | e | DRC Conflict Free | CMRT V6.31 | [object Object],[object Object] | [object Object],[object Object],[object ... more | ||||||||||||||||||||
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SMMBFJ310LT1G
onsemi
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$0.2825 | Yes | Active | N-CHANNEL | YES | JUNCTION | 225 mW | e3 | 1 | 150 °C | 260 | 30 | Matte Tin (Sn) - annealed | ONSEMI | SOT-23 (TO-236) 3 LEAD | 3 | 318 | compliant | EAR99 | N-Channel JFET Transistor | onsemi | 2024-09-19 14:45:22 | 8.02 | 8.9 | 71.378 | RoHS 2 (2015/863/EU) | 2024-01-23 | 100 | YES | 1333-86-4, 7440-02-0 | e | DRC Conflict Free | CMRT V6.31 | [object Object],[object Object] | [object Object],[object Object],[object ... more | [object Object],[object Object],[object ... more | 1039226 | [object Object],[object Object] | ||||||||||||||||||||||||||||||||||
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ATF-38143-BLKG
Broadcom Limited
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$0.4478 | Yes | Obsolete | N-CHANNEL | YES | SINGLE | 4 | 4.5 V | X BAND | 1 | 15 dB | HIGH ELECTRON MOBILITY | DEPLETION MODE | 580 mW | AMPLIFIER | GALLIUM ARSENIDE | R-PDSO-G4 | e3 | Not Qualified | 1 | 160 °C | 260 | 20 | SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | BROADCOM LTD | SMALL OUTLINE, R-PDSO-G4 | compliant | EAR99 | 7 | 8.9 | 62.300000000000004 | RoHS 2 (2015/863/EU) | 2019-01-15 | 96 | YES | 1303-00-0, 1333-86-4 | e | DRC Conflict Free Undeterminable | CMRT V2.03a | [object Object] | [object Object],[object Object],[object ... more | 8541.21.00.75 |