Parametric results for: AFT21H350W03SR6 under RF Power Field-Effect Transistors

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PD55015-E
STMicroelectronics
$17.5007 Yes Active N-CHANNEL YES SINGLE 2 40 V ULTRA HIGH FREQUENCY BAND 1 5 A HIGH RELIABILITY METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 73 W AMPLIFIER SILICON R-PDSO-G2 e3 Not Qualified 3 165 °C 250 30 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL STMICROELECTRONICS SOT ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN 10 not_compliant EAR99 STMicroelectronics
MMRF1015NR1
NXP Semiconductors
$17.9057 Yes Obsolete e3 3 260 40 Tin (Sn) NXP SEMICONDUCTORS not_compliant EAR99 NXP 8541.29.00
MRF101AN
NXP Semiconductors
$18.1670 Yes Not Recommended 260 40 NXP SEMICONDUCTORS compliant EAR99 NXP 8541.29.00 2018-11-01
MW6S010GNR1
NXP Semiconductors
$18.5184 Yes Not Recommended N-CHANNEL YES SINGLE 2 68 V L BAND 1 METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 61.4 W AMPLIFIER SILICON TO-270BA R-PDSO-G2 e3 Not Qualified 3 225 °C 260 40 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL NXP SEMICONDUCTORS ROHS COMPLIANT, PLASTIC, CASE 1265A-03, 2 PIN not_compliant EAR99 NXP 8541.29.00
MRF1535FNT1
NXP Semiconductors
$18.6882 Yes Obsolete N-CHANNEL YES SINGLE 6 40 V ULTRA HIGH FREQUENCY BAND 1 6 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 135 W AMPLIFIER SILICON TO-272BA R-PDFM-F6 e3 Not Qualified 3 200 °C 260 40 SOURCE PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Tin (Sn) FLAT DUAL NXP SEMICONDUCTORS ROHS COMPLIANT, PLASTIC, CASE 1264A-03, 6 PIN not_compliant EAR99 NXP 8541.29.00
MW6S010NR1
NXP Semiconductors
$19.3882 Yes Not Recommended N-CHANNEL YES SINGLE 2 68 V L BAND 1 METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 61.4 W AMPLIFIER SILICON TO-270AA R-PDFM-F2 e3 Not Qualified 3 225 °C 260 40 SOURCE PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Tin (Sn) FLAT DUAL NXP SEMICONDUCTORS ROHS COMPLIANT, PLASTIC, CASE 1265-09, 2 PIN not_compliant EAR99 NXP 8541.29.00
PD55015S-E
STMicroelectronics
$19.5414 Active N-CHANNEL YES SINGLE 2 40 V ULTRA HIGH FREQUENCY BAND 1 5 A HIGH RELIABILITY METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 73 W AMPLIFIER SILICON R-PDSO-F2 e3 Not Qualified 3 165 °C 250 30 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL STMICROELECTRONICS SOT ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN 10 not_compliant EAR99 STMicroelectronics
PD57018-E
STMicroelectronics
$19.5821 Yes Active N-CHANNEL YES SINGLE 2 65 V ULTRA HIGH FREQUENCY BAND 1 2.5 A HIGH RELIABILITY METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 31.7 W AMPLIFIER SILICON R-PDSO-G2 e3 Not Qualified 3 165 °C 250 30 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL STMICROELECTRONICS SOT ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN 10 not_compliant EAR99 STMicroelectronics
MRF101BN
NXP Semiconductors
$19.6213 Yes Not Recommended 260 40 NXP SEMICONDUCTORS compliant EAR99 NXP 8541.29.00 2018-11-01
AFT20S015GNR1
NXP Semiconductors
$19.7216 Yes Not Recommended N-CHANNEL YES SINGLE 65 V S BAND 1 METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE e3 3 125 °C 260 40 SOURCE Tin (Sn) NXP SEMICONDUCTORS not_compliant EAR99 NXP 8541.29.00