Parametric results for: ptfa212002e under RF Power Field-Effect Transistors

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MRFE6VP61K25HSR5
NXP Semiconductors
$1.0000 Yes Not Recommended N-CHANNEL SEPARATE, 2 ELEMENTS 125 V ULTRA HIGH FREQUENCY BAND 2 METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.3 kW 225 °C 260 40 SOURCE NXP SEMICONDUCTORS , compliant EAR99 8541.29.00 NXP
AFT09MS015NT1
NXP Semiconductors
$1.0000 Yes Not Recommended e3 3 260 40 Tin (Sn) NXP SEMICONDUCTORS not_compliant EAR99 8541.29.00 NXP
AFT05MS004NT1
NXP Semiconductors
$1.5530 Yes Not Recommended e3 1 260 40 Matte Tin (Sn) NXP SEMICONDUCTORS compliant EAR99 8541.29.00 NXP
AFM907NT1
NXP Semiconductors
$2.4405 Yes Not Recommended 3 260 40 NXP SEMICONDUCTORS compliant EAR99 8541.29.00 NXP
AFM912NT1
NXP Semiconductors
$3.1150 Yes Not Recommended 3 260 40 NXP SEMICONDUCTORS unknown EAR99
AFT09MS007NT1
NXP Semiconductors
$3.2231 Yes Not Recommended N-CHANNEL YES SINGLE ULTRA HIGH FREQUENCY BAND 1 METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 182 W e3 3 150 °C 260 40 SOURCE Tin (Sn) NXP SEMICONDUCTORS not_compliant EAR99 8541.29.00 NXP
AFT05MS006NT1
NXP Semiconductors
$3.2547 Yes Not Recommended e3 3 260 40 Tin (Sn) NXP SEMICONDUCTORS not_compliant EAR99 8541.29.00 NXP
AFT09MS031GNR1
NXP Semiconductors
$4.1552 Yes Active N-CHANNEL YES SINGLE ULTRA HIGH FREQUENCY BAND 1 METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 317 W e3 3 150 °C 260 40 Tin (Sn) NXP SEMICONDUCTORS not_compliant EAR99 8541.29.00 NXP
2SK3075(TE12L,Q)
Toshiba America Electronic Components
$5.1325 End Of Life TOSHIBA CORP unknown Toshiba
PD55003L-E
STMicroelectronics
$5.9580 Yes Active N-CHANNEL YES SINGLE 5 40 V ULTRA HIGH FREQUENCY BAND 1 2.5 A HIGH RELIABILITY METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 14 W AMPLIFIER SILICON S-PQCC-N5 e3 Not Qualified 3 150 °C NOT SPECIFIED NOT SPECIFIED SOURCE PLASTIC/EPOXY SQUARE CHIP CARRIER Matte Tin (Sn) NO LEAD QUAD STMICROELECTRONICS 5 X 5 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMD, POWERFLAT-5 not_compliant EAR99 STMicroelectronics 5