Parametric results for: nes1823 under RF Power Field-Effect Transistors

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A2T08VD020NT1
NXP Semiconductors
$7.9050 Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS 24 105 V ULTRA HIGH FREQUENCY BAND 2 18 dB METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE AMPLIFIER SILICON S-PBCC-N24 e3 3 225 °C -40 °C 260 40 SOURCE PLASTIC/EPOXY SQUARE CHIP CARRIER Tin (Sn) NO LEAD BOTTOM NXP SEMICONDUCTORS , compliant EAR99 8542.33.00.01
PD55003-E
STMicroelectronics
$7.9384 Yes Active N-CHANNEL YES SINGLE 2 40 V ULTRA HIGH FREQUENCY BAND 1 2.5 A HIGH RELIABILITY METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 31.7 W AMPLIFIER SILICON R-PDSO-G2 e3 Not Qualified 3 165 °C 250 30 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL STMICROELECTRONICS ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN not_compliant EAR99 SOT 10 STMicroelectronics
AFT27S006NT1
NXP Semiconductors
$8.3737 Yes Not Recommended N-CHANNEL YES SINGLE 2 ULTRA HIGH FREQUENCY BAND 1 21 dB METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.5 W R-PDFM-F2 e3 3 150 °C -40 °C 260 40 PLASTIC/EPOXY RECTANGULAR FLATPACK Tin (Sn) FLAT DUAL NXP SEMICONDUCTORS not_compliant EAR99 8541.29.00 NXP
A2T27S020NR1
NXP Semiconductors
$9.3000 Yes Not Recommended N-CHANNEL YES SINGLE 2 65 V S BAND 1 20 dB METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE AMPLIFIER SILICON TO-270AA R-PDFP-F2 e3 3 225 °C -40 °C 260 40 SOURCE PLASTIC/EPOXY RECTANGULAR FLATPACK Tin (Sn) FLAT DUAL NXP SEMICONDUCTORS , compliant EAR99 8541.29.00 NXP
PD55003S-E
STMicroelectronics
$9.9402 Yes Active N-CHANNEL YES SINGLE 2 40 V ULTRA HIGH FREQUENCY BAND 1 2.5 A HIGH RELIABILITY METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 31.7 W AMPLIFIER SILICON R-PDSO-F2 e3 Not Qualified 3 165 °C 250 30 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL STMICROELECTRONICS ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN not_compliant EAR99 SOT 10 STMicroelectronics
AFT27S010NT1
NXP Semiconductors
$10.5058 Yes Obsolete N-CHANNEL YES SINGLE 65 V S BAND 1 METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE e3 3 150 °C 260 40 SOURCE Tin (Sn) NXP SEMICONDUCTORS not_compliant EAR99 8541.29.00 NXP
AFT05MS031NR1
NXP Semiconductors
$11.1785 Yes Not Recommended N-CHANNEL YES SINGLE ULTRA HIGH FREQUENCY BAND 1 METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 294 W e3 3 150 °C 260 40 SOURCE Tin (Sn) NXP SEMICONDUCTORS not_compliant EAR99 8541.29.00 NXP
AFT09MS031NR1
NXP Semiconductors
$11.3619 Yes Not Recommended N-CHANNEL YES SINGLE ULTRA HIGH FREQUENCY BAND 1 METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 317 W e3 3 150 °C 260 40 SOURCE Tin (Sn) NXP SEMICONDUCTORS not_compliant EAR99 8541.29.00 NXP
MW6S004NT1
NXP Semiconductors
$11.4101 Yes Not Recommended N-CHANNEL YES SINGLE 4 68 V L BAND 1 METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE AMPLIFIER SILICON R-PQSO-N4 e3 Not Qualified 3 150 °C 260 40 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) NO LEAD QUAD NXP SEMICONDUCTORS ROHS COMPLIANT, PLASTIC, PLD 1.5, CASE 466-03, 4 PIN not_compliant EAR99 8541.29.00 NXP
AFT05MS031GNR1
NXP Semiconductors
$11.4300 Yes Not Recommended N-CHANNEL YES SINGLE ULTRA HIGH FREQUENCY BAND 1 METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 294 W e3 3 150 °C 260 40 Tin (Sn) NXP SEMICONDUCTORS not_compliant EAR99 8541.29.00 NXP