Parametric results for: FCH2532 under Power Field-Effect Transistors

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AO6608
Alpha & Omega Semiconductor
$0.0854 Yes Yes Active N-CHANNEL AND P-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 30 V 2 3.4 A 60 mΩ 18 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 A SWITCHING SILICON R-PDSO-G6 1 150 °C -55 °C 260 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL ALPHA & OMEGA SEMICONDUCTOR LTD TSOP-6 compliant EAR99 8.8 11.9 104.72 Alpha & Omega Semiconductors 2024-01-30 17:22:03 8.8 Military: -55C to +150C RoHS 2 (2015/863/EU) 2023-06-14 DRC Conflict Free CMRT V6.31 [object Object] [object Object],[object Object],[object ... more
PJA3400_R1_00001
PanJit Semiconductor
$0.0859 Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 30 V 1 4.9 A 38 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 19.6 A SWITCHING SILICON R-PDSO-G3 e3 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL PANJIT INTERNATIONAL INC GREEN, PLASTIC PACKAGE-3 compliant EAR99 PANJIT 2024-01-03 14:53:27 8.8 RoHS 2 (2015/863/EU) 2024-01-23 DRC Conflict Free CMRT V6.22 [object Object] [object Object],[object Object],[object ... more MOSFET 30V N-Channel Enhancement Mode MOSFET 8.4 73.92000000000002 90 YES 7439-92-1, 1333-86-4 [object Object]
MMFTN3404A
Diotec Semiconductor AG
$0.0859 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 30 V 1 5.6 A 23 mΩ 51 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.25 W 22 A SWITCHING SILICON TO-236 R-PDSO-G3 e3 1 150 °C -55 °C 260 10 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIOTEC SEMICONDUCTOR AG SOT-23, 3 PIN not_compliant EAR99 Diotec 2023-08-10 09:41:39 8.8 Military: -55C to +150C RoHS 2 (2015/863/EU) 2024-06-27 DRC Conflict Free CMRT V6.40 [object Object],[object Object] [object Object],[object Object],[object Object],[object Object],[object Object] MOSFET MOSFET, SOT-23, 30V, 5.6A, 150C, N 10 88 100 YES 79-94-7, 1333-86-4, 1309-64-4 79-94-7
PJA3411_R1_00001
PanJit Semiconductor
$0.0875 Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 3.1 A 100 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 12.4 A SWITCHING SILICON R-PDSO-G3 e3 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL PANJIT INTERNATIONAL INC GREEN, PLASTIC PACKAGE-3 compliant EAR99 PANJIT 2022-11-21 14:32:14 8.8 RoHS 2 (2015/863/EU) 2024-01-23 DRC Conflict Free CMRT V6.22 [object Object] [object Object],[object Object],[object ... more 8.4 73.92000000000002 90 YES 7439-92-1, 1333-86-4 [object Object]
DMP3099L-7
Diodes Incorporated
$0.0914 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 30 V 1 3.8 A 65 mΩ HIGH RELIABILITY METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.08 W 11 A SWITCHING SILICON R-PDSO-G3 e3 AEC-Q101 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant EAR99 Diodes Incorporated 2024-06-25 08:04:50 8.8 RoHS 2 (2015/863/EU) 2024-06-27 DRC Conflict Free CMRT V6.40 [object Object],[object Object],[object Object] [object Object],[object Object],[object ... more Diodes Inc DMP3099L-7 P-channel MOSFET Transistor, 2.9 A, -30 V, 3-Pin SOT-23 3 e AEC-Q101
YJH03N10A
Yangzhou Yangjie Electronics Co Ltd
$0.0962 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 3 A 110 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.5 W 12 A SWITCHING SILICON R-PSSO-F3 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT SINGLE YANGZHOU YANGJIE ELECTRONICS CO LTD SMALL OUTLINE, R-PSSO-F3 compliant EAR99 8.8 Military: -55C to +150C RoHS 2 (2011/65/EU) 2020-06-25 DRC Conflict Free CMRT V6.01 [object Object],[object Object],[object ... more
SI2307-TP
Micro Commercial Components
$0.0964 Yes Yes Active 30 V 2.7 A 138 mΩ e3 1 260 10 MATTE TIN MICRO COMMERCIAL COMPONENTS CORP , compliant EAR99 MCC 2024-05-17 16:34:44 8.8 RoHS 2 (2015/863/EU) 2024-06-27 DRC Conflict Free CMRT V6.31 [object Object],[object Object],[object Object],[object Object] [object Object],[object Object],[object ... more Small Signal MOSFETS 7.73632 68.079616 99 YES 1333-86-4 e
ECH8693R-TL-W
onsemi
$0.0970 Yes Active N-CHANNEL YES COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 8 24 V 2 14 A 9.1 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 60 A SWITCHING SILICON R-PDSO-F8 e6 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin/Bismuth (Sn/Bi) FLAT DUAL ONSEMI not_compliant EAR99 onsemi 2024-09-19 14:45:22 8.8 RoHS 2 (2015/863/EU) 2024-01-23 DRC Conflict Free CMRT V6.31 [object Object],[object Object] [object Object],[object Object],[object ... more ON SEMICONDUCTOR - ECH8693R-TL-W - MOSFET, DUAL N-CH, 24V, 14A, SOT-28FL 19.44 171.07200000000003 99 YES 1333-86-4, 7439-92-1 7439-92-1 8 50 SOT-28FL / ECH8 318BF [object Object],[object Object],[object ... more 7(a)
IRFML8244TRPBF
Infineon Technologies AG
$0.0973 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 25 V 1 5.8 A 24 mΩ 49 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.25 W 1.25 W 24 A SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG compliant EAR99 Infineon 2023-03-07 16:10:32 8.8 Military: -55C to +150C RoHS 2 (2015/863/EU) 2024-06-27 DRC Conflict Free CMRT V6.22 [object Object],[object Object] [object Object],[object Object],[object ... more MOSFET MOSFT 25V 5.8A 24mOhm 5.4 Qg 8.99 79.11200000000001 97 [object Object],[object Object] [object Object],[object Object],[object ... more
PJA3413_R1_00001
PanJit Semiconductor
$0.0980 Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 3.4 A 82 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 13.6 A SWITCHING SILICON R-PDSO-G3 e3 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL PANJIT INTERNATIONAL INC GREEN, PLASTIC PACKAGE-3 compliant EAR99 PANJIT 2022-12-13 09:07:43 8.8 RoHS 2 (2015/863/EU) 2024-01-23 DRC Conflict Free CMRT V6.22 [object Object] [object Object],[object Object],[object ... more 8.4 73.92000000000002 90 YES 7439-92-1, 1333-86-4 [object Object]