Parametric results for: 4N10 under Power Field-Effect Transistors

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Select parts from the table below to compare.
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DMP2305U-7
Diodes Incorporated
$0.1007 Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 4.2 A 60 mΩ 64 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 10 A SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC SOT-23, 3 PIN 3 compliant EAR99 Diodes Incorporated
CSD17382F4
Texas Instruments
$0.1007 Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE AND RESISTOR 3 30 V 1 -2.3 A 180 mΩ 19.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 500 mW 14.8 A SWITCHING SILICON R-XBCC-N3 e4 1 150 °C -55 °C 260 30 DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER NICKEL GOLD NO LEAD BOTTOM TEXAS INSTRUMENTS INC CHIP CARRIER, R-XBCC-N3 compliant EAR99 8541.21.00.40 2016-04-09
SSM3J331R,LF
Toshiba America Electronic Components
$0.1009 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 4 A 75 mΩ 60 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W 10 A SWITCHING SILICON R-PDSO-F3 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT DUAL TOSHIBA CORP SOT-23F, 3 PIN unknown EAR99 Toshiba
IRFML8244TRPBF
Infineon Technologies AG
$0.1021 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 25 V 1 5.8 A 24 mΩ 49 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.25 W 1.25 W 24 A SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG compliant EAR99 Infineon
MMFTP3401-AQ
Diotec Semiconductor AG
$0.1023 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 30 V 1 4 A 50 mΩ 60 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.4 W 1.4 W 27 A SWITCHING SILICON TO-236 R-PDSO-G3 e3 AEC-Q101 1 150 °C -55 °C 260 10 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIOTEC SEMICONDUCTOR AG not_compliant Diotec
DMG6602SVT-7
Diodes Incorporated
$0.1047 Yes Yes Not Recommended N-CHANNEL AND P-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 30 V 2 2.7 A 60 mΩ HIGH RELIABILITY METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.27 W 13 A SWITCHING SILICON R-PDSO-G6 e3 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC TSOT23, 6 PIN 6 compliant EAR99 Diodes Incorporated SOT-23
IRLML2244TRPBF
Infineon Technologies AG
$0.1057 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 4.3 A 54 mΩ 110 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.3 W 1.3 W 18 A SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG SOT-23, 3 PIN compliant EAR99 Infineon 8541.29.00.95
IRLML6401TRPBF
Infineon Technologies AG
$0.1066 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 12 V 1 4.3 A 50 mΩ ULTRA LOW RESISTANCE 33 mJ 125 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.3 W 1.3 W 34 A SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG SOT-23, 3 PIN compliant EAR99 Infineon 8541.29.00.95
AO7408
Alpha & Omega Semiconductor
$0.1070 Yes Active N-CHANNEL YES SINGLE 1 2 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 350 mW 150 °C ALPHA & OMEGA SEMICONDUCTOR LTD compliant EAR99 Alpha & Omega Semiconductors
PJA3435_R1_00001
PanJit Semiconductor
$0.1075 Yes Active P-CHANNEL YES SINGLE 3 20 V 1 500 mA 1.2 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SILICON R-PDSO-G3 e3 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL PANJIT INTERNATIONAL INC compliant EAR99 PANJIT