Parametric results for: XFS-2680-10 under RF/Microwave Switches

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Select parts from the table below to compare.
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Select Parts Part Number
F2910NBGP8
Renesas Electronics Corporation
F2977NEGK
Renesas Electronics Corporation
HMC544AETR
Analog Devices Inc
HMC221BE
Analog Devices Inc
F2970NCGK
Renesas Electronics Corporation
HMC544AE
Analog Devices Inc
F2976NEGK
Renesas Electronics Corporation
HMC221BETR
Analog Devices Inc
F2911NBGP
Renesas Electronics Corporation
ADG902BRMZ
Analog Devices Inc
Most Relevant Technical Compliance Operating Conditions Physical Other
Composite Price
Pbfree Code
Rohs Code
Part Life Cycle Code
Characteristic Impedance
Input Power-Max (CW)
Insertion Loss-Max
VSWR-Max
On Time-Nom Surface Mount
Operating Frequency-Max
RF/Microwave Device Type
Technology 1dB Compression Point
Additional Feature
Isolation-Min
Number of Functions Operating Frequency-Max
Operating Frequency-Min
Port Termination
Power Supplies
Supply Current-Max
JESD-609 Code
Operating Temperature-Max
Operating Temperature-Min
Construction
Mounting Feature
Number of Terminals
Package Body Material
Package Equivalence Code
Terminal Finish
Ihs Manufacturer
Part Package Code
Pin Count
Manufacturer Package Code
Reach Compliance Code
ECCN Code
HTS Code
Date Of Intro
Samacsys Manufacturer
Package Description
Yes Yes Active 50 Ω 23 dBm 1 dB 3.3 265 µs YES 8 GHz SPST 34 dBm HIGH LINEARITY AND ISOLATION, HIGH RELIABILITY 30 dB 1 8 GHz 30 MHz ABSORPTIVE 3.3 V 374 µA e3 105 °C -55 °C COMPONENT SURFACE MOUNT 8 SOLCC8,.08,20 TIN RENESAS ELECTRONICS CORP VFQFPN 8 NBG8P3 compliant NLR 8542390001 2020-09-09 Renesas Electronics
Yes Yes Active 50 Ω 33 dBm 0.56 dB 1.08 1.5 µs YES 6 GHz SPDT HIGH ISOLATION, I/P POWER-MAX(PEAK)=6.3W 29 dB 1 6 GHz 30 MHz REFLECTIVE 3.3 V 150 µA e3 105 °C -40 °C COMPONENT SURFACE MOUNT 12 LCC12,.08SQ,20 TIN RENESAS ELECTRONICS CORP VFQFPN 12 NEG12 compliant NLR 8542390001 Renesas Electronics
No Yes Active 50 Ω 39 dBm 1 dB 1.08 4 GHz SPDT 4 GHz e3 85 °C -40 °C COMPONENT Matte Tin (Sn) - annealed ANALOG DEVICES INC 6 RJ-6 compliant Analog Devices ROHS COMPLIANT, COMPACT, PLASTIC, SMT, SOT-26, 6 PIN
No Yes Active 50 Ω 20 dBm 1.1 dB 1.05 10 ns YES 3 GHz SPDT GAAS 8 dBm 14 dB 1 3 GHz 10 kHz REFLECTIVE 85 °C -40 °C COMPONENT SURFACE MOUNT 6 PLASTIC/EPOXY TSOP6,.11,37 ANALOG DEVICES INC 6 RJ-6 compliant EAR99 8542.39.00.01 Analog Devices SOT-23, 6 PIN
Yes Yes Active SPDT e3 TIN RENESAS ELECTRONICS CORP VFQFPN 20 NCG20P1 compliant NLR 8542390001 Renesas Electronics
No Yes Active 50 Ω 39 dBm 1 dB 1.08 4 GHz SPDT 4 GHz e3 85 °C -40 °C COMPONENT Matte Tin (Sn) - annealed ANALOG DEVICES INC 6 RJ-6 compliant Analog Devices SOT-26, 6 PIN
Yes Yes Active 50 Ω 30 dBm 0.56 dB 1.08 1.5 µs YES 10 GHz SPDT HIGH ISOLATION, I/P POWER-MAX(PEAK)=3.16W 29 dB 3 10 GHz 5 MHz REFLECTIVE 3.3 V 150 µA e3 105 °C -40 °C COMPONENT SURFACE MOUNT 12 LCC12,.08SQ,20 TIN RENESAS ELECTRONICS CORP VFQFPN 12 NEG12 compliant NLR 8542390001 Renesas Electronics
No Yes Active 50 Ω 20 dBm 1.1 dB 1.05 10 ns YES 3 GHz SPDT GAAS 8 dBm 14 dB 1 3 GHz 10 kHz REFLECTIVE 85 °C -40 °C COMPONENT SURFACE MOUNT 6 PLASTIC/EPOXY TSOP6,.11,37 ANALOG DEVICES INC 6 RJ-6 compliant Analog Devices SOT-23, 6 PIN
Yes Yes Active 75 Ω 21 dBm 0.55 dB 1.05 1000 ns YES 3.5 GHz SPST HIGH RELIABILITY, HIGH ISOLATION AND I/P POWER-MAX(PEAK)=24 DBM 75 dB 1 3.5 GHz 1 MHz REFLECTIVE 3.3 V 304 µA e3 105 °C -40 °C COMPONENT SURFACE MOUNT 8 SOLCC8,.08,20 TIN RENESAS ELECTRONICS CORP VFQFPN 8 NBG8P3 compliant NLR 8542390001 Renesas Electronics
No Yes Active 50 Ω 17.99 dBm 1.25 dB 1.07 5 ns YES 2.5 GHz DIVERSITY SWITCH CMOS 20 dBm 1 2.5 GHz REFLECTIVE 1.8/2.5 V e3 85 °C -40 °C COMPONENT SURFACE MOUNT 8 PLASTIC/EPOXY TSSOP8,.19 Matte Tin (Sn) ANALOG DEVICES INC 8 RM-8 compliant EAR99 8542.39.00.01 Analog Devices MSOP-8
Compare
F2910NBGP8
Renesas Electronics Corporation
$1.1445 Yes Yes Active 50 Ω 23 dBm 1 dB 3.3 265 µs YES 8 GHz SPST 34 dBm HIGH LINEARITY AND ISOLATION, HIGH RELIABILITY 30 dB 1 8 GHz 30 MHz ABSORPTIVE 3.3 V 374 µA e3 105 °C -55 °C COMPONENT SURFACE MOUNT 8 SOLCC8,.08,20 TIN RENESAS ELECTRONICS CORP VFQFPN 8 NBG8P3 compliant NLR 8542390001 2020-09-09 Renesas Electronics
F2977NEGK
Renesas Electronics Corporation
$1.6828 Yes Yes Active 50 Ω 33 dBm 0.56 dB 1.08 1.5 µs YES 6 GHz SPDT HIGH ISOLATION, I/P POWER-MAX(PEAK)=6.3W 29 dB 1 6 GHz 30 MHz REFLECTIVE 3.3 V 150 µA e3 105 °C -40 °C COMPONENT SURFACE MOUNT 12 LCC12,.08SQ,20 TIN RENESAS ELECTRONICS CORP VFQFPN 12 NEG12 compliant NLR 8542390001 Renesas Electronics
HMC544AETR
Analog Devices Inc
$1.8836 No Yes Active 50 Ω 39 dBm 1 dB 1.08 4 GHz SPDT 4 GHz e3 85 °C -40 °C COMPONENT Matte Tin (Sn) - annealed ANALOG DEVICES INC 6 RJ-6 compliant Analog Devices ROHS COMPLIANT, COMPACT, PLASTIC, SMT, SOT-26, 6 PIN
HMC221BE
Analog Devices Inc
$1.9956 No Yes Active 50 Ω 20 dBm 1.1 dB 1.05 10 ns YES 3 GHz SPDT GAAS 8 dBm 14 dB 1 3 GHz 10 kHz REFLECTIVE 85 °C -40 °C COMPONENT SURFACE MOUNT 6 PLASTIC/EPOXY TSOP6,.11,37 ANALOG DEVICES INC 6 RJ-6 compliant EAR99 8542.39.00.01 Analog Devices SOT-23, 6 PIN
F2970NCGK
Renesas Electronics Corporation
$2.0201 Yes Yes Active SPDT e3 TIN RENESAS ELECTRONICS CORP VFQFPN 20 NCG20P1 compliant NLR 8542390001 Renesas Electronics
HMC544AE
Analog Devices Inc
$2.0483 No Yes Active 50 Ω 39 dBm 1 dB 1.08 4 GHz SPDT 4 GHz e3 85 °C -40 °C COMPONENT Matte Tin (Sn) - annealed ANALOG DEVICES INC 6 RJ-6 compliant Analog Devices SOT-26, 6 PIN
F2976NEGK
Renesas Electronics Corporation
$2.0669 Yes Yes Active 50 Ω 30 dBm 0.56 dB 1.08 1.5 µs YES 10 GHz SPDT HIGH ISOLATION, I/P POWER-MAX(PEAK)=3.16W 29 dB 3 10 GHz 5 MHz REFLECTIVE 3.3 V 150 µA e3 105 °C -40 °C COMPONENT SURFACE MOUNT 12 LCC12,.08SQ,20 TIN RENESAS ELECTRONICS CORP VFQFPN 12 NEG12 compliant NLR 8542390001 Renesas Electronics
HMC221BETR
Analog Devices Inc
$2.0747 No Yes Active 50 Ω 20 dBm 1.1 dB 1.05 10 ns YES 3 GHz SPDT GAAS 8 dBm 14 dB 1 3 GHz 10 kHz REFLECTIVE 85 °C -40 °C COMPONENT SURFACE MOUNT 6 PLASTIC/EPOXY TSOP6,.11,37 ANALOG DEVICES INC 6 RJ-6 compliant Analog Devices SOT-23, 6 PIN
F2911NBGP
Renesas Electronics Corporation
$2.1308 Yes Yes Active 75 Ω 21 dBm 0.55 dB 1.05 1000 ns YES 3.5 GHz SPST HIGH RELIABILITY, HIGH ISOLATION AND I/P POWER-MAX(PEAK)=24 DBM 75 dB 1 3.5 GHz 1 MHz REFLECTIVE 3.3 V 304 µA e3 105 °C -40 °C COMPONENT SURFACE MOUNT 8 SOLCC8,.08,20 TIN RENESAS ELECTRONICS CORP VFQFPN 8 NBG8P3 compliant NLR 8542390001 Renesas Electronics
ADG902BRMZ
Analog Devices Inc
$2.4292 No Yes Active 50 Ω 17.99 dBm 1.25 dB 1.07 5 ns YES 2.5 GHz DIVERSITY SWITCH CMOS 20 dBm 1 2.5 GHz REFLECTIVE 1.8/2.5 V e3 85 °C -40 °C COMPONENT SURFACE MOUNT 8 PLASTIC/EPOXY TSSOP8,.19 Matte Tin (Sn) ANALOG DEVICES INC 8 RM-8 compliant EAR99 8542.39.00.01 Analog Devices MSOP-8