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CY7C199D-10VXI
Cypress Semiconductor
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$0.9893 | Yes | Yes | Transferred | 262.144 kbit | 8 | 32KX8 | 5 V | 10 ns | STANDARD SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 3 mA | 2 V | 80 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-J28 | Not Qualified | e4 | 3 | 85 °C | -40 °C | 260 | 30 | 28 | PLASTIC/EPOXY | SOJ | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | J BEND | 1.27 mm | DUAL | 3.556 mm | 17.907 mm | 7.5 mm | CYPRESS SEMICONDUCTOR CORP | SOJ | 28 | compliant | EAR99 | 8542.32.00.41 | |||||||||
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23K640T-E/SN
Microchip Technology Inc
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$0.9935 | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 3 V | 16 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 8000 | 8.192 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 10 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | AUTOMOTIVE | R-PDSO-G8 | Not Qualified | e3 | 3 | 125 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | 8 | compliant | EAR99 | 8542.32.00.51 | 3.90 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, NSOIC-8 | Microchip | ||||
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23K640-E/SN
Microchip Technology Inc
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$0.9935 | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 3 V | 16 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 8000 | 8.192 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 10 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | AUTOMOTIVE | R-PDSO-G8 | Not Qualified | e3 | 3 | 125 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | 8 | compliant | EAR99 | 8542.32.00.51 | 3.90 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, NSOIC-8 | Microchip | ||||
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IS61WV204816ALL-12TLI-TR
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 33.5544 Mbit | 16 | 2MX16 | 1.8 V | 12 ns | STANDARD SRAM | COMMON | 1 | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 60 mA | 1.65 V | 95 µA | 2.2 V | 1.65 V | CMOS | R-PDSO-G48 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 48 | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | INTEGRATED SILICON SOLUTION INC | compliant | 3A991.B.2.A | 8542.32.00.41 | Integrated Silicon Solution Inc. | ||||||||||||||
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IS61LPS51236B-200TQLI-TR
Integrated Silicon Solution Inc
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$1.0000 | Yes | Yes | Active | 18.8744 Mbit | 36 | 512KX36 | 3.3 V | 3 ns | CACHE SRAM | 1 | 512000 | 524.288 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PQFP-G100 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED SILICON SOLUTION INC | compliant | 3A991.B.2.A | 8542.32.00.41 | LQFP, | ||||||||||||||||||||
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IS61NLP102436B-200B3LI-TR
Integrated Silicon Solution Inc
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$1.0000 | Yes | Yes | Active | 37.7487 Mbit | 36 | 1MX36 | 3.3 V | 3.1 ns | ZBT SRAM | PIPELINED ARCHITECTURE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PBGA-B165 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 15 mm | 13 mm | INTEGRATED SILICON SOLUTION INC | compliant | 3A991.B.2.A | 8542.32.00.41 | TBGA, | |||||||||||||||||||
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IS61WV51216EDALL-20TLI-TR
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 8.3886 Mbit | 16 | 512KX16 | 1.8 V | 20 ns | STANDARD SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 2.2 V | 1.65 V | CMOS | INDUSTRIAL | R-PDSO-G44 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 44 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | compliant | 3A991.B.2.A | 8542.32.00.41 | TSOP2, | Integrated Silicon Solution Inc. | ||||||||||||||||||||
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IS62WV51216EALL-55TLI-TR
Integrated Silicon Solution Inc
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$1.0000 | Yes | Yes | Active | 8.3886 Mbit | 16 | 512KX16 | 1.8 V | 55 ns | STANDARD SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 2.2 V | 1.65 V | CMOS | INDUSTRIAL | R-PDSO-G44 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 44 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | compliant | 3A991.B.2.A | 8542.32.00.41 | TSOP2, | Integrated Silicon Solution Inc. | |||||||||||||||||||
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IS61WV20488FBLL-10TLI-TR
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | STANDARD SRAM | NOT SPECIFIED | NOT SPECIFIED | INTEGRATED SILICON SOLUTION INC | compliant | Integrated Silicon Solution Inc. | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS61WV12824-8BL-TR
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 3.1457 Mbit | 24 | 128KX24 | 3.3 V | 8 ns | STANDARD SRAM | 1 | 128000 | 131.072 k | ASYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 119 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | BALL | 1.27 mm | BOTTOM | 3.5 mm | 22 mm | 14 mm | INTEGRATED SILICON SOLUTION INC | compliant | 3A991.B.2.A | 8542.32.00.41 | BGA, | Integrated Silicon Solution Inc. |