Filter Your Search
31 - 40 of 10,109 results
|
LH23512D-20
Sharp Corp
|
Check for Price | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 200 ns | MASK ROM | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 100 µA | 5.5 V | 4.5 V | NMOS | COMMERCIAL | R-PDIP-T28 | Not Qualified | e0 | 70 °C | 28 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | DUAL | SHARP CORP | 0.600 INCH, PLASTIC, DIP-28 | unknown | |||||||||||||||||||
|
HY23W08000D-120
MagnaChip Semiconductor Ltd
|
Check for Price | Contact Manufacturer | 4.1943 Mbit | 8 | 512KX8 | 3.3 V | 150 ns | MASK ROM | 1 | 1000000 | 1.0486 M | ASYNCHRONOUS | PARALLEL | 50 µA | 60 µA | CMOS | COMMERCIAL | R-PDIP-T32 | Not Qualified | 70 °C | 32 | PLASTIC/EPOXY | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | MAGNACHIP SEMICONDUCTOR LTD | unknown | EAR99 | 8542.32.00.71 | |||||||||||||||||||||
|
HB1831C-Y-000
Hughes Aircraft
|
Check for Price | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 140 ns | MASK ROM | 1 | 512 | 512 words | SYNCHRONOUS | SERIAL | 14 µA | CMOS | MILITARY | R-GDIP-T24 | Not Qualified | 125 °C | -55 °C | 24 | CERAMIC, GLASS-SEALED | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | DUAL | HUGHES AIRCRAFT | , | unknown | EAR99 | 8542.32.00.71 | |||||||||||||||||||||||
![]() |
MX23L1010MI-20
Macronix International Co Ltd
|
Check for Price | No | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 3 V | 200 ns | MASK ROM | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 µA | 20 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G32 | Not Qualified | e0 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | SOP | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | GULL WING | 1.27 mm | DUAL | 2.9972 mm | 20.447 mm | 11.303 mm | MACRONIX INTERNATIONAL CO LTD | SOP, SOP32,.56 | unknown | EAR99 | 8542.32.00.71 | SOIC | 32 | ||||||||
|
5962-01-028-6970
Texas Instruments
|
Check for Price | No | Obsolete | 8 | 32X8 | 5 V | 45 ns | MASK ROM | 32 | 32 words | 80 µA | TTL | MILITARY | R-XDIP-T16 | Not Qualified | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 16 | CERAMIC | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | TEXAS INSTRUMENTS INC | DIP, DIP16,.3 | not_compliant | EAR99 | 8542.32.00.71 | |||||||||||||||||||||
|
LH53BV32900AN
Sharp Corp
|
Check for Price | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 3.3 V | 100 ns | MASK ROM | CONFIGURABLE AS 1M X 32 | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 30 µA | 3.6 V | 3 V | CMOS | R-PDSO-G70 | Not Qualified | 70 | PLASTIC/EPOXY | SSOP | RECTANGULAR | SMALL OUTLINE, SHRINK PITCH | YES | GULL WING | 800 µm | DUAL | 3.1 mm | 28.6 mm | 12.7 mm | SHARP CORP | SSOP-70 | unknown | ||||||||||||||||||||
|
UPD23C32380F9-XXX-BC3-A
NEC Electronics America Inc
|
Check for Price | Yes | Obsolete | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 100 ns | MASK ROM | 8 | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 50 µA | CMOS | COMMERCIAL | R-PBGA-B48 | Not Qualified | e1 | 70 °C | -10 °C | 48 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.07 mm | 8 mm | 6 mm | NEC ELECTRONICS AMERICA INC | 8 X 6 MM, LED FREE, TFBGA-48 | compliant | ||||||||||||||||
|
MX23L6451MC
Macronix International Co Ltd
|
Check for Price | Obsolete | MACRONIX INTERNATIONAL CO LTD | , | unknown | EAR99 | 8542.32.00.71 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
KM23C512G-20
Samsung Semiconductor
|
Check for Price | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 200 ns | MASK ROM | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 100 µA | 30 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G32 | Not Qualified | e0 | 70 °C | 32 | PLASTIC/EPOXY | SOP | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | GULL WING | 1.27 mm | DUAL | 3 mm | 20.47 mm | 11.43 mm | SAMSUNG SEMICONDUCTOR INC | SOP, SOP32,.56 | unknown | EAR99 | 8542.32.00.71 | SOIC | 32 | |||||||||
|
KM23256SJ-20
Samsung Semiconductor
|
Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 200 ns | MASK ROM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 75 µA | MOS | COMMERCIAL | S-PQCC-J28 | Not Qualified | e0 | 3 | 70 °C | 28 | PLASTIC/EPOXY | QCCJ | LDCC28,.5SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | SAMSUNG SEMICONDUCTOR INC | QCCJ, LDCC28,.5SQ | unknown | EAR99 | 8542.32.00.71 |