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7201LA15JG
Integrated Device Technology Inc
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$5.2143 | Yes | Yes | Transferred | 4.608 kbit | 9 | 512X9 | 5 V | 15 ns | 40 MHz | 25 ns | OTHER FIFO | RETRANSMIT | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 5 mA | 80 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PQCC-J32 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | GREEN, PLASTIC, LCC-32 | 32 | compliant | EAR99 | 8542.32.00.71 | ||||||
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7201LA12JG8
Integrated Device Technology Inc
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$5.2620 | Yes | Yes | Transferred | 4.608 kbit | 9 | 512X9 | 5 V | 12 ns | 50 MHz | 20 ns | OTHER FIFO | RETRANSMIT | 1 | 512 | 512 words | ASYNCHRONOUS | NO | PARALLEL | 5 mA | 80 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PQCC-J32 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | PLCC | PLASTIC, LCC-32 | 32 | compliant | EAR99 | 8542.32.00.71 | PLG32 | 1988-01-01 | |||||
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72V01L25JGI8
Integrated Device Technology Inc
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$5.2620 | Yes | Yes | Transferred | 4.608 kbit | 9 | 512X9 | 3.3 V | 25 ns | 28.5 MHz | 35 ns | OTHER FIFO | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 5 mA | 60 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PQCC-J32 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.556 mm | 13.995 mm | 11.455 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | PLCC-32 | 32 | compliant | EAR99 | 8542.32.00.71 | |||||||||||
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7201LA15JGI8
Integrated Device Technology Inc
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$5.2620 | Yes | Yes | Transferred | 4.608 kbit | 9 | 512X9 | 5 V | 15 ns | 40 MHz | 25 ns | OTHER FIFO | RETRANSMIT | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 5 mA | 80 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | PLCC | PLASTIC, LCC-32 | 32 | compliant | EAR99 | 8542.32.00.71 | PLG32 | 1988-01-01 | |||
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7200L12JG8
Integrated Device Technology Inc
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$5.2764 | Yes | Yes | Transferred | 2.304 kbit | 9 | 256X9 | 5 V | 12 ns | 50 MHz | 20 ns | OTHER FIFO | RETRANSMIT | 1 | 256 | 256 words | ASYNCHRONOUS | NO | PARALLEL | 5 mA | 80 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PQCC-J32 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | PLCC | GREEN, PLASTIC, LCC-32 | 32 | compliant | EAR99 | 8542.32.00.71 | PLG32 | 1988-01-01 | |||||
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IDT7202LA35SO
Integrated Device Technology Inc
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$5.2992 | No | No | Obsolete | 9.216 kbit | 9 | 1KX9 | 5 V | 35 ns | 22.2 MHz | 45 ns | OTHER FIFO | RETRANSMIT | 1 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 500 µA | 125 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G28 | Not Qualified | e0 | 3 | 70 °C | 225 | 30 | 28 | PLASTIC/EPOXY | SOP | SOP28,.5 | RECTANGULAR | SMALL OUTLINE | YES | Tin/Lead (Sn85Pb15) | GULL WING | 1.27 mm | DUAL | 3.048 mm | 18.3642 mm | 8.763 mm | INTEGRATED DEVICE TECHNOLOGY INC | SOIC | SOIC-28 | 28 | not_compliant | EAR99 | 8542.32.00.71 | ||||||
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SN74ALVC7805-40DLR
Texas Instruments
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$5.4886 | Yes | Yes | Obsolete | 4.608 kbit | 18 | 256X18 | 3.3 V | 20 ns | 50 MHz | 40 ns | OTHER FIFO | 1 | 256 | 256 words | SYNCHRONOUS | 3-STATE | YES | PARALLEL | 40 nA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G56 | Not Qualified | e4 | 1 | 70 °C | 260 | 30 | 56 | PLASTIC/EPOXY | SSOP | SSOP56,.4 | RECTANGULAR | SMALL OUTLINE, SHRINK PITCH | YES | NICKEL PALLADIUM GOLD | GULL WING | 635 µm | DUAL | 2.79 mm | 18.415 mm | 7.5 mm | TEXAS INSTRUMENTS INC | SSOP | 0.300 INCH, 0.635 MM PITCH, GREEN, PLASTIC, SSOP-56 | 56 | compliant | EAR99 | 8542.39.00.01 | Texas Instruments | |||||||
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7202LA25JGI
Integrated Device Technology Inc
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$5.5861 | Yes | Yes | Transferred | 9.216 kbit | 9 | 1KX9 | 5 V | 25 ns | 28.5 MHz | 35 ns | OTHER FIFO | RETRANSMIT | 1 | 1000 | 1.024 k | ASYNCHRONOUS | NO | PARALLEL | 5 mA | 80 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | GREEN, PLASTIC, LCC-32 | 32 | compliant | EAR99 | 8542.32.00.71 | ||||||
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7201LA12TPG
Integrated Device Technology Inc
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$5.6310 | Yes | Yes | Transferred | 4.608 kbit | 9 | 512X9 | 5 V | 12 ns | 50 MHz | 20 ns | OTHER FIFO | RETRANSMIT | 1 | 512 | 512 words | ASYNCHRONOUS | NO | PARALLEL | 5 mA | 80 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T28 | Not Qualified | e3 | 1 | 70 °C | 260 | 28 | PLASTIC/EPOXY | DIP | DIP28,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.572 mm | 34.671 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | PDIP | GREEN, PLASTIC, DIP-28 | 28 | compliant | EAR99 | 8542.32.00.71 | PTG28 | 1988-01-01 | ||||||
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7201LA15SOGI8
Integrated Device Technology Inc
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$5.6700 | Yes | Yes | Transferred | 4.608 kbit | 9 | 512X9 | 5 V | 15 ns | 40 MHz | 25 ns | OTHER FIFO | RETRANSMIT | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 5 mA | 80 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-G28 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 28 | PLASTIC/EPOXY | SOP | RECTANGULAR | SMALL OUTLINE | YES | TIN | GULL WING | 1.27 mm | DUAL | 3.048 mm | 18.3642 mm | 8.763 mm | INTEGRATED DEVICE TECHNOLOGY INC | SOIC | PLASTIC, SOIC-28 | 28 | compliant | EAR99 | 8542.32.00.71 | PEG28 |