Parametric results for: FT725-03095-031 under FIFOs

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SN74ACT2229DW
Texas Instruments
$13.5928 Yes Yes Active 256 bit 1 256X1 5 V 9 ns 60 MHz 16.67 ns OTHER FIFO 1 256 256 words SYNCHRONOUS 3-STATE YES SERIAL 400 µA 400 nA 5.5 V 4.5 V CMOS INDUSTRIAL R-PDSO-G28 Not Qualified e4 1 85 °C -40 °C 260 30 28 PLASTIC/EPOXY SOP SOP28,.4 RECTANGULAR SMALL OUTLINE YES NICKEL PALLADIUM GOLD GULL WING 1.27 mm DUAL 2.65 mm 17.9 mm 7.5 mm TEXAS INSTRUMENTS INC SOIC ROHS COMPLIANT, PLASTIC, SOIC-28 28 compliant EAR99 8542.39.00.01
72V02L15JG
Renesas Electronics Corporation
$14.8910 Yes Yes Active 9.216 kbit 9 1KX9 3.3 V 15 ns 25 ns OTHER FIFO 1 1000 1.024 k ASYNCHRONOUS 3-STATE NO PARALLEL 5 mA 60 µA 3.6 V 3 V CMOS COMMERCIAL R-PQCC-N32 e3 1 70 °C 260 30 32 PLASTIC/EPOXY QCCN LCC32,.45X.55 RECTANGULAR CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD 2.79 mm 13.97 mm 11.43 mm RENESAS ELECTRONICS CORP PLCC 32 compliant NLR 8542320071 PLG32 Renesas Electronics
72241L10JG
Integrated Device Technology Inc
$17.0601 Yes Yes Transferred 36.864 kbit 9 4KX9 5 V 6.5 ns 10 ns OTHER FIFO 1 4000 4.096 k SYNCHRONOUS 3-STATE YES PARALLEL 5 mA 35 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PLCC-J32 Not Qualified e3 3 70 °C 260 30 32 PLASTIC/EPOXY RECTANGULAR YES Matte Tin (Sn) - annealed J BEND QUAD INTEGRATED DEVICE TECHNOLOGY INC PLCC LCC-32 32 compliant EAR99 8542.32.00.71 PLG32 1992-01-01
72V223L6BC
Integrated Device Technology Inc
$17.1255 No No Transferred 9.216 kbit 18 512X18 3.3 V 4 ns 166 MHz 6 ns OTHER FIFO IT CAN ALSO BE CONFIGURED AS 1K X 9; RET... more 9 1 512 512 words SYNCHRONOUS YES PARALLEL 15 mA 35 µA 3.45 V 3.15 V CMOS COMMERCIAL S-PBGA-B100 Not Qualified e0 3 70 °C 225 30 100 PLASTIC/EPOXY LBGA BGA100,10X10,40 SQUARE GRID ARRAY, LOW PROFILE YES TIN LEAD BALL 1 mm BOTTOM 1.5 mm 11 mm 11 mm INTEGRATED DEVICE TECHNOLOGY INC CABGA 11 X 11 MM, 1 MM PITCH, BGA-100 100 not_compliant EAR99 8542.32.00.71 BC100 1998-11-01
5962-8753103XA
Integrated Device Technology Inc
$17.5153 No No Transferred 4.608 kbit 9 512X9 5 V 80 ns 10 MHz 100 ns OTHER FIFO RETRANSMIT 1 512 512 words ASYNCHRONOUS 3-STATE NO PARALLEL 900 µA 100 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Not Qualified e0 1 125 °C -55 °C 240 MIL-STD-883 28 CERAMIC, GLASS-SEALED DIP DIP28,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.08 mm 37.211 mm 15.24 mm INTEGRATED DEVICE TECHNOLOGY INC CDIP CERAMIC, DIP-28 28 not_compliant EAR99 8542.32.00.71 CD28 1990-01-01
7204L12JG8
Renesas Electronics Corporation
$17.8999 Yes Yes Active 36.864 kbit 9 4KX9 5 V 12 ns 50 MHz 20 ns BI-DIRECTIONAL FIFO 1 4000 4.096 k ASYNCHRONOUS 3-STATE NO PARALLEL 12 mA 120 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PQCC-J32 Not Qualified e3 1 70 °C 260 30 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD 3.556 mm 13.9954 mm 11.4554 mm RENESAS ELECTRONICS CORP PLCC 32 compliant NLR 8542320071 PLG32 Renesas Electronics
7201LA50DB
Integrated Device Technology Inc
$19.5679 No No Transferred 4.608 kbit 9 512X9 5 V 50 ns 15 MHz 65 ns OTHER FIFO RETRANSMIT 1 512 512 words ASYNCHRONOUS NO PARALLEL 900 µA 100 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Not Qualified e0 1 125 °C -55 °C 240 MIL-STD-883 Class B 28 CERAMIC, GLASS-SEALED DIP DIP28,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.08 mm 37.211 mm 15.24 mm INTEGRATED DEVICE TECHNOLOGY INC CDIP 0.600 INCH, CERAMIC, DIP-28 28 not_compliant EAR99 8542.32.00.71 CD28 1988-01-01
7204L12JG
Renesas Electronics Corporation
$21.7213 Yes Yes Active 36.864 kbit 9 4KX9 5 V 12 ns 50 MHz 20 ns BI-DIRECTIONAL FIFO 1 4000 4.096 k ASYNCHRONOUS 3-STATE NO PARALLEL 12 mA 120 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PQCC-J32 Not Qualified e3 1 70 °C 260 30 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD 3.556 mm 13.9954 mm 11.4554 mm RENESAS ELECTRONICS CORP PLCC 32 compliant NLR 8542320071 PLG32 Renesas Electronics
72V85L15PAG
Integrated Device Technology Inc
$21.7415 Yes Yes Transferred 73.728 kbit 9 8KX9 3.3 V 15 ns 40 MHz 25 ns OTHER FIFO RETRANSMIT 1 8000 8.192 k ASYNCHRONOUS NO PARALLEL 5 mA 100 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G56 Not Qualified e3 1 70 °C 260 30 56 PLASTIC/EPOXY TSSOP TSSOP56,.3,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES MATTE TIN GULL WING 500 µm DUAL 1.2 mm 14 mm 6.1 mm INTEGRATED DEVICE TECHNOLOGY INC TSSOP TSSOP-56 56 compliant EAR99 8542.32.00.71 PAG56 1996-03-01
72V06L25JGI
Integrated Device Technology Inc
$22.2338 Yes Yes Transferred 147.456 kbit 9 16KX9 3.3 V 25 ns 35 ns RETRANSMIT 1 16000 16.384 k ASYNCHRONOUS NO PARALLEL 3.6 V 3 V CMOS INDUSTRIAL R-PQCC-J32 Not Qualified e3 3 85 °C -40 °C 260 30 32 PLASTIC/EPOXY QCCJ RECTANGULAR CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD 3.55 mm 13.97 mm 11.43 mm INTEGRATED DEVICE TECHNOLOGY INC PLCC LCC-32 32 compliant EAR99 8542.32.00.71 PLG32 1988-01-01