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Parametric » Memory » EPROMs

Parametric results for: MX25L25673GZ4I-08G-T under EPROMs

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AT93C46DN-SH-B
 Microchip Technology Inc 		$0.2940 Yes Yes Active 1.024 kbit 16 64X16 5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN 8 100 1000000 Write/Erase Cycles SEPARATE 1 1 64 64 words SYNCHRONOUS 3-STATE SERIAL 5 V NO 3-WIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES NICKEL PALLADIUM GOLD GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm MICROCHIP TECHNOLOGY INC SOIC-8 compliant 3A991.A.2 8542.31.00.01 Microchip
AT93C46D-TH-T
 Microchip Technology Inc 		$0.2990 Yes Yes Active 1.024 kbit 16 64X16 5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN 8 100 1000000 Write/Erase Cycles SEPARATE 1 1 64 64 words SYNCHRONOUS 3-STATE SERIAL 5 V NO 3-WIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm MICROCHIP TECHNOLOGY INC TSSOP-8 compliant 3A991.A.2 8542.31.00.01 Microchip
AT93C46DY6-YH-E
 Microchip Technology Inc 		$0.3160 Yes Active 1.024 kbit 16 64X16 5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN 8 100 1000000 Write/Erase Cycles SEPARATE 1 1 64 64 words SYNCHRONOUS 3-STATE SERIAL 5 V NO 3-WIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-N8 e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY HVSON SOLCC8,.12,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH YES NICKEL PALLADIUM GOLD NO LEAD 500 µm DUAL 600 µm 3 mm 2 mm MICROCHIP TECHNOLOGY INC UDFN-8 compliant EAR99 8542.32.00.51 Microchip
AT93C46E-TH-B
 Microchip Technology Inc 		$0.3265 Yes Yes Active 1.024 kbit 16 64X16 5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN 100 1000000 Write/Erase Cycles SEPARATE 1 1 64 64 words SYNCHRONOUS 3-STATE SERIAL 5 V NO 3-WIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES NICKEL PALLADIUM GOLD GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm MICROCHIP TECHNOLOGY INC TSSOP-8 compliant 3A991.A.2 8542.31.00.01 Microchip
AT93C46EN-SH-T
 Microchip Technology Inc 		$0.3497 Yes Yes Active 1.024 kbit 16 64X16 5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN 100 1000000 Write/Erase Cycles SEPARATE 1 1 64 64 words SYNCHRONOUS 3-STATE SERIAL 5 V NO 3-WIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e4 3 85 °C -40 °C 260 40 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES NICKEL PALLADIUM GOLD GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm MICROCHIP TECHNOLOGY INC SOIC-8 compliant 3A991.A.2 8542.31.00.01 Microchip
CAT24C128WI-GT3
 onsemi 		$0.4316 Yes Active 131.072 kbit 8 16KX8 3.3 V 1 MHz EEPROM 5MICROAMP STANDBY CURRENT AVAILABLE @ 12... more 1 100 1000000 Write/Erase Cycles 1 16000 16.384 k SYNCHRONOUS OPEN-DRAIN SERIAL 3.3 V I2C 2 µA 3 µA 5.5 V 2.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm ONSEMI compliant EAR99 8542.32.00.51 onsemi SOIC 8, 150 mils 8 751BD
AT93C46E-PU
 Microchip Technology Inc 		$0.5359 Yes Yes Active 1.024 kbit 16 64X16 5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN 100 1000000 Write/Erase Cycles SEPARATE 1 1 64 64 words SYNCHRONOUS 3-STATE SERIAL 5 V NO 3-WIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDIP-T8 Not Qualified e3 85 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.334 mm 9.271 mm 7.62 mm MICROCHIP TECHNOLOGY INC DIP-8 compliant 3A991.A.2 8542.31.00.01 Microchip
CAT24C128HU4IGT3
 onsemi 		$0.5578 Yes Active 131.072 kbit 8 16KX8 3.3 V 1 MHz EEPROM 5MICROAMP STANDBY CURRENT AVAILABLE @ 12... more 1 100 1000000 Write/Erase Cycles 1 16000 16.384 k SYNCHRONOUS OPEN-DRAIN SERIAL 3.3 V I2C 2 µA 3 µA 5.5 V 2.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-N8 Not Qualified e4 1 85 °C -40 °C 260 30 8 PLASTIC/EPOXY HVSON SOLCC8,.12,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES Nickel/Palladium/Gold (Ni/Pd/Au) NO LEAD 500 µm DUAL 550 µm 3 mm 2 mm ONSEMI compliant EAR99 8542.32.00.51 onsemi UDFN8, 2x3, 0.5P, Extended Pad 8 517AZ
CAT24C128YI-GT3
 onsemi 		$0.5684 Yes Active 131.072 kbit 8 16KX8 3.3 V 1 MHz EEPROM 5MICROAMP STANDBY CURRENT AVAILABLE @ 12... more 1 100 1000000 Write/Erase Cycles 1 16000 16.384 k SYNCHRONOUS OPEN-DRAIN SERIAL 3.3 V I2C 2 µA 3 µA 5.5 V 2.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 30 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm ONSEMI compliant EAR99 8542.32.00.51 onsemi TSSOP8, 4.4x3 8 948AL
M27C512-90F6
 STMicroelectronics 		$0.8511 Yes Obsolete 524.288 kbit 8 64KX8 5 V 90 ns UVPROM COMMON 1 64000 65.536 k ASYNCHRONOUS 3-STATE PARALLEL 100 µA 30 µA 5.5 V 4.5 V CMOS INDUSTRIAL R-GDIP-T28 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 28 CERAMIC, GLASS-SEALED WDIP DIP28,.6 RECTANGULAR IN-LINE, WINDOW NO THROUGH-HOLE 2.54 mm DUAL 5.72 mm 36.92 mm 15.24 mm STMICROELECTRONICS CERAMIC, DIP-28 unknown EAR99 8542.32.00.61 STMicroelectronics DIP 28
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